ITEM DESCRIPTION Application The Cluster type equipment for the manuf acture of CIGS Solarcell. Mo layer-CIGS la yer- IZnO-TCO layer etc. Sequentially form ation. Substrate Type Glass & Wafer Substrate Size ~ 200mm (option) Metal Sputter Mo,ZnO,TCO CIGS Evaporator Cu,In,Ga,Se Using effusion source Glass Heating Max 300
ITEM DESCRIPTION Application The Cluster type equipment for the manuf acture of a-Si Solar Cell. Back Contact la yer Absorb layer-Front contact layer etc. S equentially formation. Substrate Type Glass & Wafer Substrate Size ~ 200mm (option) Metal Sputter AZO,Ag & etc PE-CVD PIN Layer Glass Heating Max 300 C
ITEM DESCRIPTION Substrate Size 156mm² solar wafer, 4pcs Deposition Direction Downward Plasma Source RF & VHF Power Supply Process Gas Any of Requested Gas (Solar : Si3N4,SiO2,Al2O3) Process Temperature ~ 700 C Uniformity ±3% Heating Uniformity ±3% Full Automation Control, Load Lock System
ITEM DESCRIPTION Substrate Size ~ 6inch Deposition Direction Downward Process Gas Any of Requested Gas Process Temperature ~ 1000 C on Substrate Uniformity ±3% Heating Uniformity ±3% Full Automation Control, Load Lock System
ITEM DESCRIPTION Substrate Size ~ 6inch Process Gas SiH4,GeH4,B2H6,PH3,Si2H6,H2,Ar Process Temperature ~ 800 C Halogen Lamp, Heating Load Lock, System Full Automation Control
ITEM DESCRIPTION Substrate Size ~ 8inch Deposition Direction Upward Thermal Source ~ 10V, 300A Thickness Uniformity ± 3% Heating Uniformity ± 3% Full Automation Control.
ITEM DESCRIPTION Substrate Size ~ 8inch Heating Source Halogen Lamp Deposition Direction Up or Downward Process Temp ~ 1000 C Heating Uniformity ±3% Toggle Switch Control or Touch Panel Control.
ITEM DESCRIPTION Gun Size 2~16inch (Magnetron Sputter Gun) Substrate Size ~ 200mm (option) Process Gas Ar,O2,N2 Deposition Direction Up or Downward Process Temp ~ 700 C Thickness Uniformity
ITEM DESCRIPTION Substrate Size 156mm² solar wafer, 12pcs(3.5G case, Option) Sputtering Source based 1set (Option), Aprox 100 x 800m² 8T Process Gas Ar,O2,N2 Deposition Direction Up or Downward Al Film Thickness 2m Uniformity WIW,WTW,RTR ±5%.
ITEM DESCRIPTION Substrate Size ~ 200mm (Option) Deposition Direction Downward Plasma Source RF & VHF Power Supply Process Gas Any of Requested Gas based on Ar,O2 Process Temperature ~ 700 C Uniformity ±3% Heating Uniformity ±3% Full Automation Control, Load Lock System.
ITEM DESCRIPTION Substrate Size ~ 6inch Deposition Direction Downward Process Gas Any of Requested Gas Process Temperature ~ 700 C on Substrate Source Heat Bubbler for Mo Source Thickness Uniformity ±5% Heating Uniformity ±3% Load Lock System, Full Automation Control
ITEM DESCRIPTION Substrate Size ~ 200mm (Option) Etching Direction Downward Process Gas Any of Requested Gas Based on Ar,O2,CF4,SF6 Etching Uniformity ±5% Load Lock System, Full Automation Control
ITEM DESCRIPTION Substrate Size ~ 200mm (Option) Etching Direction Downward Process Gas Any of Requested Gas Based on Ar,O2,CF4,SF6 Etching Uniformity ±5% Load Lock System, Full Automation Control
ITEM DESCRIPTION Substrate Size ~ 12.5 inch Etching Direction Downward Process Gas Any of Requested Gas Based on Ar,O2,CF4,SF6 Etching Uniformity ±5% Load Lock System, Full Automation Control
ITEM DESCRIPTION Substrate Size ~ 8inch Deposition Direction Upward E-BEAM Source ~ 15kw Thickness Uniformity ± 3% Heating Uniformity ± 3% Full Automation Control
ITEM DESCRIPTION Consisting of Evaporation,Sputter,Parylene,Glove Box,Loadlock Tact time 20~80 min Depends on the number of mask Loading Capacity Glass 1 Sheet, Mask 4 Sheet Transfer Methode Vacuum Robot Plasma Treatment Optional Evaporation Source for Organic (5ea) 10cc for host, 4cc for dopant Evaporation Source for metal (2ea) Thermal Source, E-Beam is optional Deposition Uniformity Organic, Metal, Sputter less than ±3% Max. deposition rate Organic 5A/sec, metal 10A/sec Rate Accuracy Organic ±5%, Metal ±7% Thickness reliability Organic & Metal ±5% glass to glass Conductive Oxide Low Damage Sputtering (FTS or General Sputter) Doping ratio less than 1% at 1A/sec of host.
ITEM DESCRIPTION Substrate Size 125mm² 16pcs, 156mm² 9pcs Heating Source Halogen Lamp Deposition Direction Up or Downward Process Temp ~ 1100 C Heating Uniformity ±5% Sustain Time More Than 2min. at 1100 Lamping Rate 10 to 20 C / sec Cooling Rate 5 to 20 C / sec Gas mixing capability with MFC .
ITEM DESCRIPTION Substrate Size 2 inch Heating Source Halogen Lamp Deposition Direction Up or Downward Process Temp ~ 1000 C Heating Uniformity ±3% Toggle Switch Control or Touch Panel Control.
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