ITEM DESCRIPTION
Substrate Size 156mm² solar wafer, 4pcs
Deposition Direction Downward
Plasma Source RF & VHF Power Supply
Process Gas Any of Requested Gas (Solar : Si3N4,SiO2,Al2O3)
Process Temperature ~ 700 C
Uniformity ±3%
Heating Uniformity ±3%
Full Automation Control, Load Lock System
ITEM DESCRIPTION Substrate Size ~ 200mm (Option) Deposition Direction Downward Plasma Source RF & VHF Power Supply Process Gas Any of Requested Gas based on Ar,O2 Process Temperature ~ 700 C Uniformity ±3% Heating Uniformity ±3% Full Automation Control, Load Lock System.
ITEM DESCRIPTION Substrate Size ~ 6inch Deposition Direction Downward Process Gas Any of Requested Gas Process Temperature ~ 1000 C on Substrate Uniformity ±3% Heating Uniformity ±3% Full Automation Control, Load Lock System
PC-950 paper cup machine is improved based on the normal chain driving type. This machine is based on Open Cam System(No Gear Box).This machine runs a whole procedure of paper-feeding, cup-fan-wall sealing, oiling, bottom punching, heating, rolling, rimming, rounding and tripping. It is an ideal equipment for producing drinking cups, market cups, coffee cups, advertising cups , etc. It is widely used for hot drink and beverage. If you need double pe coated paper cups or paper gram higher 250g/m2, we recommend you to use Ultrasonic paper cup machine. It can produce single pe coated paper cups and double pe coated paper cups.
ITEM DESCRIPTION Substrate Size ~ 6inch Process Gas SiH4,GeH4,B2H6,PH3,Si2H6,H2,Ar Process Temperature ~ 800 C Halogen Lamp, Heating Load Lock, System Full Automation Control
ITEM DESCRIPTION Substrate Size ~ 8inch Deposition Direction Upward Thermal Source ~ 10V, 300A Thickness Uniformity ± 3% Heating Uniformity ± 3% Full Automation Control.
ITEM DESCRIPTION Substrate Size ~ 8inch Heating Source Halogen Lamp Deposition Direction Up or Downward Process Temp ~ 1000 C Heating Uniformity ±3% Toggle Switch Control or Touch Panel Control.
ITEM DESCRIPTION Gun Size 2~16inch (Magnetron Sputter Gun) Substrate Size ~ 200mm (option) Process Gas Ar,O2,N2 Deposition Direction Up or Downward Process Temp ~ 700 C Thickness Uniformity
ITEM DESCRIPTION Substrate Size 156mm² solar wafer, 12pcs(3.5G case, Option) Sputtering Source based 1set (Option), Aprox 100 x 800m² 8T Process Gas Ar,O2,N2 Deposition Direction Up or Downward Al Film Thickness 2m Uniformity WIW,WTW,RTR ±5%.
ITEM DESCRIPTION Substrate Size ~ 6inch Deposition Direction Downward Process Gas Any of Requested Gas Process Temperature ~ 700 C on Substrate Source Heat Bubbler for Mo Source Thickness Uniformity ±5% Heating Uniformity ±3% Load Lock System, Full Automation Control
