ITEM DESCRIPTION Substrate Size ~ 6inch Deposition Direction Downward Process Gas Any of Requested Gas Process Temperature ~ 1000 C on Substrate Uniformity ±3% Heating Uniformity ±3% Full Automation Control, Load Lock System
ITEM DESCRIPTION Substrate Size ~ 6inch Process Gas SiH4,GeH4,B2H6,PH3,Si2H6,H2,Ar Process Temperature ~ 800 C Halogen Lamp, Heating Load Lock, System Full Automation Control
ITEM DESCRIPTION Substrate Size ~ 8inch Deposition Direction Upward Thermal Source ~ 10V, 300A Thickness Uniformity ± 3% Heating Uniformity ± 3% Full Automation Control.
ITEM DESCRIPTION Substrate Size ~ 8inch Heating Source Halogen Lamp Deposition Direction Up or Downward Process Temp ~ 1000 C Heating Uniformity ±3% Toggle Switch Control or Touch Panel Control.
ITEM DESCRIPTION Gun Size 2~16inch (Magnetron Sputter Gun) Substrate Size ~ 200mm (option) Process Gas Ar,O2,N2 Deposition Direction Up or Downward Process Temp ~ 700 C Thickness Uniformity
ITEM DESCRIPTION Substrate Size 156mm² solar wafer, 12pcs(3.5G case, Option) Sputtering Source based 1set (Option), Aprox 100 x 800m² 8T Process Gas Ar,O2,N2 Deposition Direction Up or Downward Al Film Thickness 2m Uniformity WIW,WTW,RTR ±5%.
ITEM DESCRIPTION Substrate Size ~ 200mm (Option) Deposition Direction Downward Plasma Source RF & VHF Power Supply Process Gas Any of Requested Gas based on Ar,O2 Process Temperature ~ 700 C Uniformity ±3% Heating Uniformity ±3% Full Automation Control, Load Lock System.
ITEM DESCRIPTION Substrate Size ~ 6inch Deposition Direction Downward Process Gas Any of Requested Gas Process Temperature ~ 700 C on Substrate Source Heat Bubbler for Mo Source Thickness Uniformity ±5% Heating Uniformity ±3% Load Lock System, Full Automation Control
ITEM DESCRIPTION Substrate Size ~ 200mm (Option) Etching Direction Downward Process Gas Any of Requested Gas Based on Ar,O2,CF4,SF6 Etching Uniformity ±5% Load Lock System, Full Automation Control
ITEM DESCRIPTION Substrate Size ~ 200mm (Option) Etching Direction Downward Process Gas Any of Requested Gas Based on Ar,O2,CF4,SF6 Etching Uniformity ±5% Load Lock System, Full Automation Control
ITEM DESCRIPTION Substrate Size ~ 12.5 inch Etching Direction Downward Process Gas Any of Requested Gas Based on Ar,O2,CF4,SF6 Etching Uniformity ±5% Load Lock System, Full Automation Control
ITEM DESCRIPTION Substrate Size ~ 8inch Deposition Direction Upward E-BEAM Source ~ 15kw Thickness Uniformity ± 3% Heating Uniformity ± 3% Full Automation Control
ITEM DESCRIPTION Consisting of Evaporation,Sputter,Parylene,Glove Box,Loadlock Tact time 20~80 min Depends on the number of mask Loading Capacity Glass 1 Sheet, Mask 4 Sheet Transfer Methode Vacuum Robot Plasma Treatment Optional Evaporation Source for Organic (5ea) 10cc for host, 4cc for dopant Evaporation Source for metal (2ea) Thermal Source, E-Beam is optional Deposition Uniformity Organic, Metal, Sputter less than ±3% Max. deposition rate Organic 5A/sec, metal 10A/sec Rate Accuracy Organic ±5%, Metal ±7% Thickness reliability Organic & Metal ±5% glass to glass Conductive Oxide Low Damage Sputtering (FTS or General Sputter) Doping ratio less than 1% at 1A/sec of host.
ITEM DESCRIPTION Substrate Size 125mm² 16pcs, 156mm² 9pcs Heating Source Halogen Lamp Deposition Direction Up or Downward Process Temp ~ 1100 C Heating Uniformity ±5% Sustain Time More Than 2min. at 1100 Lamping Rate 10 to 20 C / sec Cooling Rate 5 to 20 C / sec Gas mixing capability with MFC .
ITEM DESCRIPTION Substrate Size 2 inch Heating Source Halogen Lamp Deposition Direction Up or Downward Process Temp ~ 1000 C Heating Uniformity ±3% Toggle Switch Control or Touch Panel Control.
With is high spatial resolution, this product allows mapping for metal contamination in the wafer. It realizes user-friendly structure through automation. It minimizes the maintenance and management cost by using a small amount of chemicals. With its short analysis time and mapping capacity, this product contributes to the improvement of productivity and yield through prompt response and prior detection to problems that occur in the process.
It is the equipment to provide the electron beam vertically to the evaporate surface using the electron beam gun, and it is used in the process of optical multi-layer films This is the process micro electro mechanical system (MEMS) known as the electron beam evaporation process Physical Vapor Deposition (PVD) The deposition process is used to open the data in the source and send those data to the basal board and also to form thin films or coating. Because this is inexpensive regarding the material cost and exhibits rather low process risk, PVD process is the chemical vapor deposition generally used for metal eposition. The process applying the deposition of thin films conducts modification with various kinds of surfaces wanted by the industry in order to provide data to the electronic industry for semicon doctor growth, reflection needing properties to the aerospace, environment to the permeability optics, surface protection from the board corrosion, and also thermal and chemical barrier coating.
Vacuum degassing chamber.
It is easy to use for the automation of analyzing processes. The overall efficiency of analysis increases with shortened time for analysis. The buffer zone keeps the process zone vacuum all the time, so the inflow of dirty gas from outside is minimized and the precision of analysis becomes maximized. Keeping the process zone vacuum delays the aging of heater components more than before, so it is good for cost reduction. The automation of analysis processes maximizes the utility of time of testing manpower. Minimizing the contact of samples for analysis to the outside minimizes contamination. The increase of analysis efficiency actualizes the dedtion of faultiness in advance, so it is possible to test the processes.
With is high spatial resolution, this product allows mapping for metal contamination in the wafer. It realizes user-friendly structure through automation. It minimizes the maintenance and management cost by using a small amount of chemicals. With its short analysis time and mapping capacity, this product contributes to the improvement of productivity and yield through prompt response and prior detection to problems that occur in the process.
