Dummy grade silicon wafer. Diameter: 2-12 inch. Resistivity >1 ohm.Cm, surface condition: ssp, dsp or as-cut Dummy grade silicon wafer. Packing: coin roll or as customer request. ( like epack packing cassette) Usage: recycled solar material, machine testing, etc
Place of origin united states Brand name bondatek Bondatek provides ge, gaas, gap, gan, gasb, inp, inas, insb wafers to micro- electronics and optoelectronics industry in diameter range from 2" to 4" with orientation or , epd< 5000 cm-2 and epi ready surface. Inp based 25 piece/pieces
Now our products including 125*125 and 156*156, and all of them is high inner quality and surface quality Crystal structure Mono-crystalline Crystal method CZ Conductance Type P Dopant B dimension 125*125í+0.4 125*125í+0.4 156*156í+0.4 Diameter ª¦150í+0.4 ª¦165í+0.4 ª¦200í+0.4 Crystal orientation í+1 Resistivity( ª+.cm) 1-3/3-6 Lifetime( ª¦s) í¦15 Carbon concentration( atoms/cm3 ) í_5*1016 Oxygen concentration( atoms/cm3 ) í_0.95*1018. 300pcs/box.
(2" 3" 4", 6",8",12") , (N/P), ( , ) One or tow sides polished IC grade silicon wafers. 25pcs/lot.
We can supply (2" 3" 4", 6",8",12") , (N/P), ( , ) one or two sides polished IC silicon dummy(test) wafers. 25pcs/Lot.
We can supply (2" 3" 4", 6") , (N/P), ( , ) IC silicon wafer. 25pcs/lot
High quality and good surface quality to meet the updating request of pv development and reduce the production cost. Crystal structuremono-crystalline Crystal method cz Conductance typep Dopant b Dimension125*125ía0.4156*156ía0.4 Diameter ª¦150ía0.4 ª¦165ía0.4ª¦200ía0.4 Crystal orientation ía1 Resistivity( ª+.Cm) 1-3/3-6 Lifetime( ª8s) í²15 Carbon concentration( atoms/cm3 )ín5*1016 Oxygen concentration( atoms/cm3 )ín0.95*1018 125*125 and 156*156
Silicon wafers.
Multicrystalline silicon wafers 1.Material: multicrystalline silicon 2.Growth method: directional solidification 3.Conductivity type: p-type (boron doped), astm f42 4.Oxygen concentration: n 1, 0x1017 at./cm3, astm f 121 5.Carbon concentration: n 1x1018 at./cm3, astm f 121 * oxygen content measurement by astm 1188 and used calculation coefficient for ppm atomic is 4, 9 and and for at/cm3 is 2, 45e+17. 6.Square side: (156.0 0.5) mm 7.Symmetry as per the drawing in the enclosure no. 1 8.Thickness: (200 30) µm, astm f 533 9.Ttv: < 50 µm, astm f657 10.Bow < 50 µm, astm f 534 11.Surface saw damage depth µm < 20 (< 15 typically) 12.Saw traces µm 2 µs, astm f 28 15.Surface: as-cut and cleaned; visible contamination, oil or grease, finger prints, soap stains, slurry stains, epoxy/water stains, cracks are not allowed; edge chips under 1 mm from the edge of the wafer are allowed. . 16.Customer may request to receive reference samples 17.Wafers are being stacked into batches of 50-100 wafers each. Then it is sealed into polyethylene film. Protective paper among wafers is upon customer request. 500 -600 wafers in total are being packed into styrofoam box. Styrofoam boxes are being packed into pasteboard cases. Wafers are being packed in such a manner as to ensure minimal damage to the product during transportation. 18.All polystyrene boxes of wafers are identified with: box number; type of wafer; number of wafers per box; all contributing ingots numbers; thickness of wafers; date of packing / output inspection. Geometry: Square side angle:900, 5 Chamfer: 1, 5 mm0, 5mm at 452
Ic broken wafers and top/tails.
Potato wafers.
Confectionery Items, Chocolate Truffles, Bubblegum, Wafers And Premium Gift Items..Shipping.
Chips like potato wafers, banana chips.
A) Type of Wafer >Wafer : 6"-12" >Dummy/Monitor/Prime/Spacer Test Wafer 6" - 12" >Thin Wafer Thicknesss : 150um - 850um >Aluminium Wafer : 6" to 12" >Test Wafer / Oxide Wafer : 6" - 12" >Special Wafer (Nitride, SiC, LT, LN, SOI....etc) B) Types of Wafer Services > Various level (Dummy, Monitor Prime, Test, Spacer, Reclaim) >Chemical/Electroless Plating Services on Ti, Cu, AI Pad. Shipping Boxes Range: >FOSB,FOUP >Cassette: 2-12inch >MW type >Entegris type >Pizza Box
Advantage of top quality factory price 156x156mm 200um high quality Hot Sales A Grade polysilicon wafer The production process is simple, cost-effective, and reduces silicon waste High conversion efficiency, low fragmentation rate and low optical attenuation Manufacturing Specialization, Intelligence and Greening Customized products to meet customer needs Technology : Diamond wire cutting Type : P type Resistance:1~3μs minority carrier:>2 μs Hem width:157.00~157.25mm Thickness:200±20μm Transfer efficiency:>18.8%
Advantage of top quality factory price 156x156mm 200um high quality Hot Sales A Grade polysilicon wafer ?The production process is simple, cost-effective, and reduces silicon waste ?High conversion efficiency, low fragmentation rate and low optical attenuation ?Manufacturing Specialization, Intelligence and Greening ?Customized products to meet customer
Advantage of 156x156mm 200um High efficiency silicon wafers The production process is simple, cost-effective, and reduces silicon waste High conversion efficiency, low fragmentation rate and low optical attenuation Manufacturing Specialization, Intelligence and Greening Customized products to meet customer needs Name: High efficiency polysilicon wafer Technology : Diamond wire cutting Type : P type Resistance:1~3 minority carrier:>2 Hem width:157.00~157.25mm Thickness:200±20μm Transfer efficiency:>18.8%
Name: High efficiency polysilicon wafer Technology : Diamond wire cutting Type : P type Resistance:1~3 minority carrier:>2 Hem width:157.00~157.25mm Thickness:200±20 m Transfer efficiency:>18.8% Advantage of top quality factory price 156x156mm 200um high quality Hot Sales A Grade polysilicon wafer The production process is simple, cost-effective, and reduces silicon waste High conversion efficiency, low fragmentation rate and low optical attenuation Manufacturing Specialization, Intelligence and Greening Customized products to meet customer needs
Name: High efficiency polycrystalline silicon block Technology :Semi-melting Type: P Type Resistance:1~3©cm minority carrier :>6s Hem width:157.00~157.25mm Angle of Chamfer:1~2mm Name: High efficiency polysilicon wafer Technology : Diamond wire cutting Type : P type Resistance:1~3s minority carrier:>2 s Hem width:157.00~157.25mm Thickness:200±20m Transfer efficiency:>18.8%
Name: High efficiency polycrystalline silicon block Technology :Semi-melting Type: P Type Resistance:1~3©cm minority carrier :>6s Hem width:157.00~157.25mm Angle of Chamfer:1~2mm Name: High efficiency polysilicon wafer Technology : Diamond wire cutting Type : P type Resistance:1~3s minority carrier:>2 s Hem width:157.00~157.25mm Thickness:200±20m Transfer efficiency:>18.8%
