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Sending Inquiry For: Silicon Wafer

Oct-30-09
 
High quality and good surface quality to meet the updating request of pv development and reduce the production cost.
Crystal structuremono-crystalline
Crystal method cz
Conductance typep
Dopant b
Dimension125*125ía0.4156*156ía0.4
Diameter ª¦150ía0.4 ª¦165ía0.4ª¦200ía0.4
Crystal orientation <100>ía1
Resistivity( ª+.Cm) 1-3/3-6
Lifetime( ª8s) í²15
Carbon concentration( atoms/cm3 )ín5*1016
Oxygen concentration( atoms/cm3 )ín0.95*1018


125*125 and 156*156
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