Name: High efficiency polycrystalline silicon block Technology :Semi-melting Type: P Type Resistance:1~3©cm minority carrier :>6s Hem width:157.00~157.25mm Angle of Chamfer:1~2mm Name: High efficiency polysilicon wafer Technology : Diamond wire cutting Type : P type Resistance:1~3s minority carrier:>2 s Hem width:157.00~157.25mm Thickness:200±20m Transfer efficiency:>18.8%