We can supply (2" 3" 4", 6",8",12") , (N/P), (<100> , <111>) one or two sides polished IC silicon dummy(test) wafers.
25pcs/Lot.
Dummy grade silicon wafer. Diameter: 2-12 inch. Resistivity >1 ohm.Cm, surface condition: ssp, dsp or as-cut Dummy grade silicon wafer. Packing: coin roll or as customer request. ( like epack packing cassette) Usage: recycled solar material, machine testing, etc
High quality and good surface quality to meet the updating request of pv development and reduce the production cost. Crystal structuremono-crystalline Crystal method cz Conductance typep Dopant b Dimension125*125ía0.4156*156ía0.4 Diameter ª¦150ía0.4 ª¦165ía0.4ª¦200ía0.4 Crystal orientation ía1 Resistivity( ª+.Cm) 1-3/3-6 Lifetime( ª8s) í²15 Carbon concentration( atoms/cm3 )ín5*1016 Oxygen concentration( atoms/cm3 )ín0.95*1018 125*125 and 156*156
Silicon wafers.
A) Type of Wafer >Wafer : 6"-12" >Dummy/Monitor/Prime/Spacer Test Wafer 6" - 12" >Thin Wafer Thicknesss : 150um - 850um >Aluminium Wafer : 6" to 12" >Test Wafer / Oxide Wafer : 6" - 12" >Special Wafer (Nitride, SiC, LT, LN, SOI....etc) B) Types of Wafer Services > Various level (Dummy, Monitor Prime, Test, Spacer, Reclaim) >Chemical/Electroless Plating Services on Ti, Cu, AI Pad. Shipping Boxes Range: >FOSB,FOUP >Cassette: 2-12inch >MW type >Entegris type >Pizza Box
Semiconductor grade silicon wafers with diameter 2" up to 6". One side or double side polished. Boron, Phosphorus, Antimony and Arsenic doped
Product name: 2-12 Inch Orientation 100/111/110 SSP Prime/Dummy Grade Silicon Wafer Place of Origin: China Material: Silicon Diameter:2-12 inch Thickness: 100-1500um Orientation: 100/110/111 Type/Dopant: intrinsic or P/B or N/Ph Grade: prime/dummy Bow/Warp:
semiconductor si wafers prime grade/high quality diameter from 2" to 12" ultra thin or ultra thick crystalline orientation , , most resistivity range 1000 pack/packs / week
Now our products including 125*125 and 156*156, and all of them is high inner quality and surface quality Crystal structure Mono-crystalline Crystal method CZ Conductance Type P Dopant B dimension 125*125í+0.4 125*125í+0.4 156*156í+0.4 Diameter ª¦150í+0.4 ª¦165í+0.4 ª¦200í+0.4 Crystal orientation í+1 Resistivity( ª+.cm) 1-3/3-6 Lifetime( ª¦s) í¦15 Carbon concentration( atoms/cm3 ) í_5*1016 Oxygen concentration( atoms/cm3 ) í_0.95*1018. 300pcs/box.
(2" 3" 4", 6",8",12") , (N/P), ( , ) One or tow sides polished IC grade silicon wafers. 25pcs/lot.
