Name: High efficiency
polycrystalline silicon block
Technology :Semi-melting
Type: P Type
Resistance:1~3©cm
minority carrier :>6s
Hem width:157.00~157.25mm
Angle of Chamfer:1~2mm
Name: High efficiency polysilicon wafer
Technology : Diamond wire cutting
Type : P type
Resistance:1~3s
minority carrier:>2 s
Hem width:157.00~157.25mm
Thickness:200±20m
Transfer efficiency:>18.8%