The series of pressure sensor is a small size piezo-resistive pressure sensor. The die size is 1x1mm2. When the input voltage is 3vdc the sensor produces mv dc output voltage which is direct proportion of the input pressure. Pressure sensor is the absolute pressure sensor, and we can also offer the differential pressure mode. All the products can be customized according to your requirement. Features Solid, mems technique, high reliability Low cost, tiny size,-1700kpa Nonlinearity: < 0.20%fso Silicon/silicon bonding wafer, high stability Application For high resolution absolute sensor systems Engine control Tire gauge Barometers, altimeters, variometers, sphygmomanometer Min Typ Max Unit Remarks Excitation voltage 5.0 V Excitation current 1 Ma Span Fs rang 100kpa 50 70 90 Mv 1 150kpa, 200kpa, 350kpa, 700kpa, 1000kpa 80 120 180 Mv 1.7mpa 100 150 200 Mv Offset -35 35 Mv 2 Tc span -24 -19 -15.5 %fs/100 3 Tc offset -7 +7 %fs/100 3 Tcr +18 +22 +33 % /100 3 Linearity -0.45 -0.15 +0.45 %fs 4 Bridge impedance 5 K|¸ Proof pressure 2x Fixed fs Burst pressure 4x Fixed fs Operating temperature -40 +125 Storage temperature -55 +150 Notes: 1. Measured at 5v constant voltage excitation. 2. The offset is ¡¡§¡è50mv for 100kpa, 150kpa 3. Measured from 0 to 60 c 4. Defined as best straight line. Full scale pressure Kpa Bar Mbar Psi Atm Mmhg Mmh2o Kg/cm 2 , 700 7 700 102 6.9 5250 71451 7.1 1700 17 1700 247 16.8 12754 173524 17.3 Model Pressure ranges Kpa Psa 100 010 200 Psa 070 020 350 035 700 070 1000 Pressure range Pressure type 100 1700 170 3500 350 Standard packaging
High quality and good surface quality to meet the updating request of pv development and reduce the production cost. Crystal structuremono-crystalline Crystal method cz Conductance typep Dopant b Dimension125*125ía0.4156*156ía0.4 Diameter ª¦150ía0.4 ª¦165ía0.4ª¦200ía0.4 Crystal orientation ía1 Resistivity( ª+.Cm) 1-3/3-6 Lifetime( ª8s) í²15 Carbon concentration( atoms/cm3 )ín5*1016 Oxygen concentration( atoms/cm3 )ín0.95*1018 125*125 and 156*156
Silicon wafers.
A) Type of Wafer >Wafer : 6"-12" >Dummy/Monitor/Prime/Spacer Test Wafer 6" - 12" >Thin Wafer Thicknesss : 150um - 850um >Aluminium Wafer : 6" to 12" >Test Wafer / Oxide Wafer : 6" - 12" >Special Wafer (Nitride, SiC, LT, LN, SOI....etc) B) Types of Wafer Services > Various level (Dummy, Monitor Prime, Test, Spacer, Reclaim) >Chemical/Electroless Plating Services on Ti, Cu, AI Pad. Shipping Boxes Range: >FOSB,FOUP >Cassette: 2-12inch >MW type >Entegris type >Pizza Box
Product name: 2-12 Inch Orientation 100/111/110 SSP Prime/Dummy Grade Silicon Wafer Place of Origin: China Material: Silicon Diameter:2-12 inch Thickness: 100-1500um Orientation: 100/110/111 Type/Dopant: intrinsic or P/B or N/Ph Grade: prime/dummy Bow/Warp:
semiconductor si wafers prime grade/high quality diameter from 2" to 12" ultra thin or ultra thick crystalline orientation , , most resistivity range 1000 pack/packs / week
Dummy grade silicon wafer. Diameter: 2-12 inch. Resistivity >1 ohm.Cm, surface condition: ssp, dsp or as-cut Dummy grade silicon wafer. Packing: coin roll or as customer request. ( like epack packing cassette) Usage: recycled solar material, machine testing, etc
Now our products including 125*125 and 156*156, and all of them is high inner quality and surface quality Crystal structure Mono-crystalline Crystal method CZ Conductance Type P Dopant B dimension 125*125í+0.4 125*125í+0.4 156*156í+0.4 Diameter ª¦150í+0.4 ª¦165í+0.4 ª¦200í+0.4 Crystal orientation í+1 Resistivity( ª+.cm) 1-3/3-6 Lifetime( ª¦s) í¦15 Carbon concentration( atoms/cm3 ) í_5*1016 Oxygen concentration( atoms/cm3 ) í_0.95*1018. 300pcs/box.
(2" 3" 4", 6",8",12") , (N/P), ( , ) One or tow sides polished IC grade silicon wafers. 25pcs/lot.
We can supply (2" 3" 4", 6",8",12") , (N/P), ( , ) one or two sides polished IC silicon dummy(test) wafers. 25pcs/Lot.
We can supply (2" 3" 4", 6") , (N/P), ( , ) IC silicon wafer. 25pcs/lot
Multicrystalline silicon wafers 1.Material: multicrystalline silicon 2.Growth method: directional solidification 3.Conductivity type: p-type (boron doped), astm f42 4.Oxygen concentration: n 1, 0x1017 at./cm3, astm f 121 5.Carbon concentration: n 1x1018 at./cm3, astm f 121 * oxygen content measurement by astm 1188 and used calculation coefficient for ppm atomic is 4, 9 and and for at/cm3 is 2, 45e+17. 6.Square side: (156.0 0.5) mm 7.Symmetry as per the drawing in the enclosure no. 1 8.Thickness: (200 30) µm, astm f 533 9.Ttv: < 50 µm, astm f657 10.Bow < 50 µm, astm f 534 11.Surface saw damage depth µm < 20 (< 15 typically) 12.Saw traces µm 2 µs, astm f 28 15.Surface: as-cut and cleaned; visible contamination, oil or grease, finger prints, soap stains, slurry stains, epoxy/water stains, cracks are not allowed; edge chips under 1 mm from the edge of the wafer are allowed. . 16.Customer may request to receive reference samples 17.Wafers are being stacked into batches of 50-100 wafers each. Then it is sealed into polyethylene film. Protective paper among wafers is upon customer request. 500 -600 wafers in total are being packed into styrofoam box. Styrofoam boxes are being packed into pasteboard cases. Wafers are being packed in such a manner as to ensure minimal damage to the product during transportation. 18.All polystyrene boxes of wafers are identified with: box number; type of wafer; number of wafers per box; all contributing ingots numbers; thickness of wafers; date of packing / output inspection. Geometry: Square side angle:900, 5 Chamfer: 1, 5 mm0, 5mm at 452
Semiconductor grade silicon wafers with diameter 2" up to 6". One side or double side polished. Boron, Phosphorus, Antimony and Arsenic doped
Advantage of 156x156mm 200um High efficiency silicon wafers The production process is simple, cost-effective, and reduces silicon waste High conversion efficiency, low fragmentation rate and low optical attenuation Manufacturing Specialization, Intelligence and Greening Customized products to meet customer needs Name: High efficiency polysilicon wafer Technology : Diamond wire cutting Type : P type Resistance:1~3 minority carrier:>2 Hem width:157.00~157.25mm Thickness:200±20μm Transfer efficiency:>18.8%
top quality factory price 156x156mm 200um high quality High efficiency solar silicon wafers Manufacturer The production process is simple, cost-effective, and reduces silicon waste High conversion efficiency, low fragmentation rate and low optical attenuation Manufacturing Specialization, Intelligence and Greening Customized products to meet customer needs Name: High efficiency polysilicon wafer Technology : Diamond wire cutting Type : P type Resistance:1~3s minority carrier:>2 s Hem width:157.00~157.25mm Thickness:200±20m Transfer efficiency:>18.8%
MF: Si Chemical Name: Silicon Nanowires Purity: > 99.9% Diameter: 40-50 nm Length: 80 µm Form Nanowires Product Number: CAS Number 7440-21-3
A container for carrying semiconductor wafers/silicon wafers, resistant to acid, alkali, and corrosion (strong acid, strong fluoric acid, strong alkali), capable of laser engraving, and able to install RFID. Maintain tracking of carriers and materials. Mainly used for cleaning, using, and transporting wafers in the acid-base process of semiconductor etching departments. #wafercleaning #semiconductor #Newenergy #wafers
Made of high-purity resin Teflon, it is resistant to strong acids and alkalis, and can withstand high temperatures: -200~+250C. The surface is smooth, non-stick, and easy to clean. Wafer Container specifications and styles can be customized.
The premier manufacturer and supplier in Mena region. The first ever produced batch was grade 52X. Currently we are producing 553, 441, 421 grades and is capable of producing higher grades per order. Silicon powder with purity of 99.9%+. Production capacity 2-3 tons per month
Advantage of High efficiency P Type solar silicon wafers The production process is simple, cost-effective, and reduces silicon waste High conversion efficiency, low fragmentation rate and low optical attenuation Manufacturing Specialization, Intelligence and Greening Customized products to meet customer needs There are 12 sets of WuXi ShangJi brand diamond wire slicing machines, 8 sets reforming machines, the single blade capacity is 20,000 pieces per day, and the annual production capacity is over 10 million pieces.
