Pvdf Wafer Carrier

Wafer carrier, wafer cassette: For loading 25pcs 125mm wafers. Characteristics: 1. Working temperature: -70-150 2. Corrosion resistance, long time in acid, alkaline cleaning liquid, 3. Precise dimension, 4. It's widely used in washing semiconductor silicon chip, wafer, glass, LCD screen, hold corrosive equipments, etc. Size: 152.6,144,148.7mm.

Supplier: PTFE tube, teflon tube, FEP tube, PFA tube, FEP heat shrink tube, PFA corrugated tube, spiral tube, PFA film, insulation tube, insulation film, PVDF wafer carrier, PTFE wafer carrier, PFA wafer carrier

Characteristics: 1. No sticky 2. No poison 3. Antilflaming 4. electrical insulation, 5. corrosion resistance, 6. Anti high and low temperature. -200-260. Applications: It is widely used in: 1. Heat exchangers, 2. Steam piping, 3. High-purity reagents pipeline, 4. A variety of corrosive media (harsh solvents) pipeline 5. Insulated wiring jacket. ID(mm), OD(mm), Thickness(mm), Weight (g/m) 3 4 0.5 12 4 6 1 34 5 6 0.5 19 6 8 1 48 7 10 1.5 65 8 10 1 62 10 12 1 76 12 14 1 89 12 16 2 191 14 16 1 103.

Braided teflon hose: Inside: PTFE teflon hose Outside: stainless steel braided Sizes: 3/16--1".

Multicrystalline silicon wafers 1.Material: multicrystalline silicon 2.Growth method: directional solidification 3.Conductivity type: p-type (boron doped), astm f42 4.Oxygen concentration: n 1, 0x1017 at./cm3, astm f 121 5.Carbon concentration: n 1x1018 at./cm3, astm f 121 * oxygen content measurement by astm 1188 and used calculation coefficient for ppm atomic is 4, 9 and and for at/cm3 is 2, 45e+17. 6.Square side: (156.0 0.5) mm 7.Symmetry as per the drawing in the enclosure no. 1 8.Thickness: (200 30) µm, astm f 533 9.Ttv: < 50 µm, astm f657 10.Bow < 50 µm, astm f 534 11.Surface saw damage depth µm < 20 (< 15 typically) 12.Saw traces µm 2 µs, astm f 28 15.Surface: as-cut and cleaned; visible contamination, oil or grease, finger prints, soap stains, slurry stains, epoxy/water stains, cracks are not allowed; edge chips under 1 mm from the edge of the wafer are allowed. . 16.Customer may request to receive reference samples 17.Wafers are being stacked into batches of 50-100 wafers each. Then it is sealed into polyethylene film. Protective paper among wafers is upon customer request. 500 -600 wafers in total are being packed into styrofoam box. Styrofoam boxes are being packed into pasteboard cases. Wafers are being packed in such a manner as to ensure minimal damage to the product during transportation. 18.All polystyrene boxes of wafers are identified with: box number; type of wafer; number of wafers per box; all contributing ingots numbers; thickness of wafers; date of packing / output inspection. Geometry: Square side angle:900, 5 Chamfer: 1, 5 mm0, 5mm at 452

Advantage of 156x156mm 200um High efficiency silicon wafers The production process is simple, cost-effective, and reduces silicon waste High conversion efficiency, low fragmentation rate and low optical attenuation Manufacturing Specialization, Intelligence and Greening Customized products to meet customer needs Name: High efficiency polysilicon wafer Technology : Diamond wire cutting Type : P type Resistance:1~3 minority carrier:>2 Hem width:157.00~157.25mm Thickness:200±20μm Transfer efficiency:>18.8%

Advantage of 156x156mm 200um High efficiency silicon wafers The production process is simple, cost-effective, and reduces silicon waste High conversion efficiency, low fragmentation rate and low optical attenuation Manufacturing Specialization, Intelligence and Greening Customized products to meet customer needs Name: High efficiency polysilicon wafer Technology : Diamond wire cutting Type : P type Resistance:1~3s minority carrier:>2 s Hem width:157.00~157.25mm Thickness:200±20m Transfer efficiency:>18.8%

Name: High efficiency polycrystalline silicon block Technology :Semi-melting Type: P Type Resistance:1~3©cm minority carrier :>6s Hem width:157.00~157.25mm Angle of Chamfer:1~2mm Name: High efficiency polysilicon wafer Technology : Diamond wire cutting Type : P type Resistance:1~3s minority carrier:>2 s Hem width:157.00~157.25mm Thickness:200±20m Transfer efficiency:>18.8%

Name: High efficiency polycrystalline silicon block Technology :Semi-melting Type: P Type Resistance:1~3©cm minority carrier :>6s Hem width:157.00~157.25mm Angle of Chamfer:1~2mm Name: High efficiency polysilicon wafer Technology : Diamond wire cutting Type : P type Resistance:1~3s minority carrier:>2 s Hem width:157.00~157.25mm Thickness:200±20m Transfer efficiency:>18.8%