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The 808nm series high power laser diodes with optimized QW structure made by htoe have a high reliability, high performance. It has several structures of emitter width. The 808nm series high power laser diodes can get 300mW 500mW 1.0W 2.0W 3.0W and 5.0W at RT and CW condition. These products can be applied to solid-state laser pumping sources, medical usage, target designation, and free space optical communication applications. 3W 808nm+/-10nm High Power Laser Diode !We have 2 kinds of mounting method, the C-Mount and TO3. Bidders please contact us to confirm mount type before shipment! If you don't have to contact us, we will first express TO3 for you! Outline drawings as following: Applications: 1)Solid-state Laser Pumping 2)Medical Usage 3)Target Designator 4)Free-space Optical Communication Warranty: 1) 30 days warranty from the date of delivery for manufacturer's defact only. 2) Damage caused by dust or operation mistaked can not be warranted. 3) We accept return & refund within 10 days after delivery for quality problem. 4) Buyer pays the return freight in case of return. Buyer Notice: 1) Buyers must be 18 years old and must have enough experience of using high power laser diodes. 2) Improper operation may cause damage to the laser diodes, especially for the over current operation. Seller doesn't take responsibility for these damage or loss. Shipping: 1) The handling time is around 3 workdays. 2) The shipping will be via Express Service within around 7 workdays globally.

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Power Diodes from 16 amps tp 860 Amps in Stud and Flat type packaging.

Model:sm4001 spec:1.0a 50v Model:sm4002 spec:1.0a 100v Model:sm4003 spec:1.0a 200v Model:sm4004 spec:1.0a 400v Model:sm4005 spec:1.0a 600v Model:sm4006 spec:1.0a 800v Model:sm4007 spec:1.0a 1000v

Power Diodes (Stud/Flat Type) Silicon Diodes are electronic components that conduct current in only one direction. In function, they are similar to one-way valves. Silicon Diodes, using semiconductor materials such as silicon are used as voltage regulators, signal rectifiers, oscillators and signal modulators / demodulators. Semiconductor diodes consist of a PN junction having two terminals, an anode (+) and a cathode (-). Current flows from the anode to the cathode within the diode. Diodes can be used as voltage regulators, tuning devices in RF tuned circuits, frequency multiplying devices in RF circuits, mixers in RF circuits, switching applications, or can be used to make logic decisions in digital circuits. Diodes can be sub-divided into six major categories: General Purpose Diodes (PN junction diodes) PIN Diodes Schottky Barrier Diodes Step-recovery Diodes Varactor Diodes Zener Diodes Laser Diodes PIN Diodes are three-layer Semiconductor Diodes consisting of an intrinsic layer separating heavily doped P and N layers. The charge stored in the intrinsic layer in conjunction with other Diode parameters determines the resistance of the Diode at RF and microwave frequencies. This resistance typically ranges from kilo ohms to less than 1 ohm for a given diode. PIN Diodes are typically used as switches or attenuator elements. Step-recovery Diodes employ graded doping where the doping level of the Semi conductive materials is reduced as the P/N junction is approached. This produces an abrupt turn-off time by allowing a very fast release of stored charge when switching from forward to reverse bias. It also allows a rapid re-establishment of forward current when switching from reverse to forward bias. These Diodes are used in very high frequency (VHF) and fast switching applications. Varactor Diodes are P/N junction Diodes that are designed to act as a voltage-controlled capacitance when operated under reverse bias. One characteristic of P/N junctions is inherent capacitance. When the junction is reverse biased, increasing the applied voltage will cause the depletion region to widen, thus increasing the effective distance between the two â??platesâ?? of the capacitor and decreasing the effective capacitance. By adjusting the doping gradient and junction width, the capacitance range can be controlled and changes can be applied using reverse voltage. Our Products Automatic Voltage Regulator (AVR) Automatic Transfer Switch (ATS) Power Diodes (Stud/Flat Type) Power Diodes (Capsule Type) Phase Control Thyristors (Stud/Flat Type) Phase Control Thyristors (Capsule Type) Inverter Grade Thyristors (Capsule Type) Power Modules Bridge Rectifier Modules Three Thyristor Welding Modules Bridge Rectifiers Moulded Rectifiers For Generators Mono Block Bridge Rectifiers (Single Phase) Mono Block Bridge Rectifiers (Three Phase) Welding Bridge Rectifiers Field Failure Relay (FFR) Generator Diodes

Conductively Cooled Package (CCP Package) high power laser diode bars (laser diode arrays) are widely used for solid-state pumping (DPSS laser), infrared lighting, medical & aesthetic treatment and laboratory research. NDL provides both CW and QCW (Quasi-CW) laser diode bars. Features: 20W~60W CW and 100W~300W QCW laser diode bars available. 795nm, 808nm, 940nm, 976nm (+/-3nm, +/-5nm, +/-10nm) available CS-Mount, Narrow CS-Mount, W2 Package available TM & TE Polarization Available Long life time > 10,000 Hours Support custom package design Optical Output Power (CW): 20W, 30W, 40W, 50W, 60W Optical Output Power (QCW): 100W, 150W, 200W, 300W Mounting Package: CS-Mount, Narrow CS-Mount, W2 Package or custom heatsink Wavelength Available: 795nm, 808nm, 940nm, 976nm Wavelength Tolerance: +/-3nm, +/-5nm, +/-10nm Fast Axis Collimation: Optional Expected Life Time: >10,000 Hours.