High Power Laser Diode

Conductively Cooled Package (CCP Package) high power laser diode bars (laser diode arrays) are widely used for solid-state pumping (DPSS laser), infrared lighting, medical & aesthetic treatment and laboratory research. NDL provides both CW and QCW (Quasi-CW) laser diode bars.

Features:
20W~60W CW and 100W~300W QCW laser diode bars available.
795nm, 808nm, 940nm, 976nm (+/-3nm, +/-5nm, +/-10nm) available
CS-Mount, Narrow CS-Mount, W2 Package available
TM & TE Polarization Available
Long life time > 10,000 Hours
Support custom package design
Optical Output Power (CW): 20W, 30W, 40W, 50W, 60W
Optical Output Power (QCW): 100W, 150W, 200W, 300W
Mounting Package: CS-Mount, Narrow CS-Mount, W2 Package or custom heatsink
Wavelength Available: 795nm, 808nm, 940nm, 976nm
Wavelength Tolerance: +/-3nm, +/-5nm, +/-10nm
Fast Axis Collimation: Optional
Expected Life Time: >10,000 Hours.

We offer our clients various types of diodes, which are used for x ray machine, power supply and inverter. Sourced from the reliable vendors, these are also quality checked at our premises to ensure clients' maximum satisfaction.

Cni optics provides semiconductor light emitting devices in 405-2200nm wavelength range for your research, development, and production. You will find a large selection of single mode laser diodes, fiber coupled laser diodes, multimode pump laser diodes. The small emitting aperture, combined with low beam divergence, make these devices the highest-brightness family of cw laser diodes available in the industry.

On the basis of constant technical innovation of 532nm green DPSS laser tech, laser tech engineer develops a high brightness 532nm green laser diode module within 5mW to 100mW. It projects the most visible green laser beam from a 532nm green DPSS laser. Being made with good thermal emitting and different dimension metal housing tube, it enables highly stable and accurate green dot projection in use. It provides users ideal dot aligning source for drilling system, laser marking, laser engraving, military targeting and high tech work etc.

Our comprehensive range of Rectifier Diodes offers class-leading performance and reliability. Devices are available with blocking voltages from 200 V up to 6000 V. Optimized to offer low conduction losses, these devices are ideally suited to line frequency applications up to 400Hz including input rectifiers for variable speed drives, traction converters, trackside substations, welding and DC power supplies. Featuring high temperature alloyed die construction, these devices offer low thermal impedance with high overload capacity and are designed to survive even the most arduous applications. The latest additions to the IRI Rectifier Diode family are the new 38 mm and 50 mm dia die IRI Rectifier Diodes and the new 96 mm large area rectifier diodes. These new designs are constructed using low temperature sintering technology and have an improved package design for maximum power to package ratio, as well as better thermal and electromechanical performance. The Capsule type parts are available in current ratings up to 7100 A and voltage ratings up to 6000V.

Empowering Industries with Excellence in Capsule Diodes
Welcome to Insel Rectifiers, your trusted partner in the world of power solutions. As leading Power Diode manufacturers in India, we take pride in our commitment to delivering precision and excellence in every Capsule Diode we produce. Explore our range of Capsule Diodes, discover the innovation embedded in our products, and understand why we stand out as the preferred Capsule Diode supplier for industries across the nation.

Innovation in Every Capsule
At Insel Rectifiers, innovation is at the core of our Capsule Diode manufacturing process. We specialize in crafting Capsule-Type Power Diodes that redefine industry standards. Our dedication to technological advancements ensures that each Diode is a testament to precision and reliability. Our Capsule Diodes are ideal for both energy-efficient applications and industrial settings due to their high performance and durability.

Power Diodes (Stud/Flat Type)
Silicon Diodes are electronic components that conduct current in only one direction. In function, they are similar to one-way valves. Silicon Diodes, using semiconductor materials such as silicon are used as voltage regulators, signal rectifiers, oscillators and signal modulators / demodulators.
Semiconductor diodes consist of a PN junction having two terminals, an anode (+) and a cathode (-). Current flows from the anode to the cathode within the diode. Diodes can be used as voltage regulators, tuning devices in RF tuned circuits, frequency multiplying devices in RF circuits, mixers in RF circuits, switching applications, or can be used to make logic decisions in digital circuits.

Diodes can be sub-divided into six major categories:

General Purpose Diodes (PN junction diodes)
PIN Diodes
Schottky Barrier Diodes
Step-recovery Diodes
Varactor Diodes
Zener Diodes
Laser Diodes
PIN Diodes are three-layer Semiconductor Diodes consisting of an intrinsic layer separating heavily doped P and N layers. The charge stored in the intrinsic layer in conjunction with other Diode parameters determines the resistance of the Diode at RF and microwave frequencies. This resistance typically ranges from kilo ohms to less than 1 ohm for a given diode. PIN Diodes are typically used as switches or attenuator elements.

Step-recovery Diodes employ graded doping where the doping level of the Semi conductive materials is reduced as the P/N junction is approached. This produces an abrupt turn-off time by allowing a very fast release of stored charge when switching from forward to reverse bias. It also allows a rapid re-establishment of forward current when switching from reverse to forward bias. These Diodes are used in very high frequency (VHF) and fast switching applications.

Varactor Diodes are P/N junction Diodes that are designed to act as a voltage-controlled capacitance when operated under reverse bias. One characteristic of P/N junctions is inherent capacitance. When the junction is reverse biased, increasing the applied voltage will cause the depletion region to widen, thus increasing the effective distance between the two â??platesâ?? of the capacitor and decreasing the effective capacitance. By adjusting the doping gradient and junction width, the capacitance range can be controlled and changes can be applied using reverse voltage.

Our Products

Automatic Voltage Regulator (AVR)
Automatic Transfer Switch (ATS)
Power Diodes (Stud/Flat Type)
Power Diodes (Capsule Type)
Phase Control Thyristors (Stud/Flat Type)
Phase Control Thyristors (Capsule Type)
Inverter Grade Thyristors (Capsule Type)
Power Modules
Bridge Rectifier Modules
Three Thyristor Welding Modules
Bridge Rectifiers
Moulded Rectifiers For Generators
Mono Block Bridge Rectifiers (Single Phase)
Mono Block Bridge Rectifiers (Three Phase)
Welding Bridge Rectifiers
Field Failure Relay (FFR)
Generator Diodes

Mode
4. Spot size: 12*12mm2
5. Fluence: Up to 120J/cm
7. Repetition Rate: Up to 10Hz
8. Delivery: Direct coupling thro ng¡ê©
10. Electrical: 110/220V 15A max 50/60Hz
11. Dimensions: 400*550*1250mm
12. Weight: 55Kgs

Dimensions: 400*550*1250mm
Weight: 55Kgs

INDIUM PHOSPHIDE (InP) WAFERS are semiconductor materials made of indium phosphide, a compound semiconductor that is widely used in high-frequency and optoelectronic applications. Due to its efficient electron mobility and direct bandgap properties, InP is favored for devices such as:

High-speed electronics
Laser diodes
Photodetectors
Telecommunications applications, including optical fiber communication
We offer the following InP Wafers:
Undoped InP Wafers: These are pure InP with no intentional doping, used in various applications where intrinsic properties are required.
N-type InP Wafers: Doped with donor impurities (such as tellurium) to increase electron concentration, useful in transistors and high-speed electronics.
P-type InP Wafers: Doped with acceptor impurities (such as zinc) to create holes in the semiconductor, used in light-emitting devices and other optoelectronics.
InP Substrates: Used as a base for growing other semiconductor materials in heterostructures for various applications.
InP Membrane Wafers: Thin layers of InP used for specific applications, including applications in flexible electronics and advanced photonic devices.
InP-based Quantum Dot Wafers: Engineered to create quantum dots that can be used in photonic and optoelectronic devices for enhanced performance.