Tocon-Abc10 Sic Uv Photodetector

Properties of the sic uv photodetector tocon-abc1 * broadband sic based uv photodetector in to5 housing with concentrator lens cap * 0 - 5 v voltage output * peak wavelength at 280 nm * max. Radiation (saturation limit) at peak is 18 nw/cm2, minimum radiation (resolution limit) is 1.8 pw/cm2 * applications: very low uv radiation, flame detection Specifications Typical responsivity at peak wavelength: 280 mv/nw/cm2 Wavelength of max. Spectral responsivity: 280 nm Responsivity range (s=0.1*smax): 221 - 358 nm Supply voltage: 2.5 - 5 v Dark offset voltage: 700 uv Temperature coefficient at peak: < -0.3 %/k Current consumption: 150 Bandwidth (-3 db): 15 hz Risetime (10-90%): 0.182 s Operating temperature: -25 - +85'c Storage temperature: -40 - +100'c Soldering temperature (3s): 300'c

Properties of the TOCON_ABC1 Broadband SiC based UV photodetector in TO5 housing with concentrator lens cap 0 to 5 V voltage output peak wavelength at 280 nm max. radiation (saturation limit) at peak is 18 nW/cm2, minimum radiation (resolution limit) is 1.8 pW/cm2 Applications: very low UV radiation, flame detection

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Sic uv photodiode sg01m-5lens Concentrator lens sic based uv photodiode avirtual = 11.0 mm2 Properties of the sg01m-5lens sic uv photodiode * broadband uva+uvb+uvc, ptb reported high chip stability, for very weak radiation * radiation sensitive area a = 11.0 mm2 * to5 hermetically sealed metal housing with concentrator lens, 1 isolated pin and 1 case pin * 10âµw/cm2 peak radiation results a current of approx. 140 na Specifications Typical responsivity at peak wavelength: 0.130/aw Wavelength of max. Spectral responsivity: 280 nm Responsivity range (s=0.1*smax): 221 - 358 nm Sensitive area (chip size = 0.20 mm2): 11.0 mm2 Dark current (1v reverse bias): 0.7 fa Capacitance: 50 pf Short circuit (10uw/cm2 at peak): 140 na Temperature coefficient: < 0.1 %/k Operating temperature: -55 - +170 'c Storage temperature: -55 - +170 'c Soldering temperature (3s): 260 'c Reverse voltage: 20 v

Designed with advance uv detecting technology according to who standard Uv mode: displays uv index from 0 to 18 Adjustable skin tone setting: allows user to select skin type from 1 to 4 Adjustable spf setting: allows user to input spf protection level from 0 to 99 Exposure mode: after personal skin type & spf selection is made, sensor will Indicate How much sun exposure is acceptable Temperature mode: gives ambient temperature, °c / °f switchable Sunburn alarm: will alert user through beeping that reapplication of Sunscreen is Necessary Sporty design with 14cm strap in pink, blue, yellow, orange for selection, Easy to carry & use Low power cosuption: stand-by 10ua working 1ma Application: Good for skiing, water skiing, swimming sunbathing, camping, bicyling & outdoor activities

Concentrator lens sic based uv photodiode sensor sg01d-5lens Avirtual = 11, 0 mm2 Properties of the sg01d–5lens uv photodiode • broadband uva+uvb+uvc, ptb reported high chip stability, for flame detection • radiation sensitive area a = 11, 0 mm2 • to5 hermetically sealed metal housing with concentrator lens, 1 isolated pin and 1 case pin • 10µw/cm2 peak radiation results a current of approx. 350 na About the material silicon carbide (sic) Sic provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make sic the best available material for visible blind semiconductor uv detectors. The sic detectors can be permanently operated at up to 170°c (338°f). The temperature coefficient of signal responsivity) is also low, < 0, 1%/k. Because of the low noise (dark current in the fa range), very low uv radiation intensities can be measured reliably. Please note that this device needs an appropriate amplifier (see typical circuit on page 3). Options Sic photodiodes are available with seven different active chip areas from 0, 06 mm2 up to 36 mm2. Standard versionis broadband uva-uvb-uvc. Four filtered versions lead to a tighter sensitivity range. All photodiodes have a hermetically sealed metal housing (to type), either a 5, 5 mm diameter to18 housing or a 9, 2 mm to5 housing. Further option is either a 2 pin header (1 isolated, 1 grounded) or a 3 pin header (2 isolated, 1 grounded).

SG01M-B18 UVB-only SiC based UV photodiode A = 0.20 mm2 Properties of the SG01M-B18 UV Photodiode * UVB-only sensitivity, PTB reported high chip stability * Active Area A = 0.20 mm2 * TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin * 10mW/cm2 peak radiation results a current of approx. 2500 nA SG01M-B18 UV Photodiode Specifications Typical Responsivity at Peak Wavelength: 0.125/AW Wavelength of max. Spectral Responsivity: 280nm Responsivity Range: 231 - 309nm Active Area: 0.20mm2 Dark Current (1V reverse bias): 0.7fA Capacitance: 50pF Short Circuit (10mW/cm2 at peak) : 2500nA Temperature Coefficient: < 0.1%/K Operating Temperature: -55 ~ +170°C Storage Temperature: -55 ~ +170°C Soldering Temperature (3s): 260°C Reverse Voltage: 20V

Properties of the sg01d-a18 uv photodiode * uva-only sensitivity, ptb reported high chip stability * active area a = 0.50 mm2 * to18 hermetically sealed metal housing, 1 isolated pin and 1 case pin * 10µw/cm2 peak radiation results a current of approx. 1.85 na Spectral characteristic Typical responsivity at peak wavelength: 0.037/aw Wavelength of max. Spectral responsivity: 331nm Responsivity range: 309 - 367nm Active area: 0.50mm2 Dark current (1v reverse bias): 1.7fa Capacitance: 125pf Short circuit (10µw/cm2 at peak): 1.85na Temperature coefficient: < 0.1%/k Maximum rating Operating temperature: -55 - +170'c Storage temperature: -55 - +170'c Soldering temperature (3s): 260'c Reverse voltage: 20v