Properties of the tocon-abc10 sic uv photodetector * broadband sic based uv photodetector in to5 housing with attenuator * 0 - 5 v voltage output * peak wavelength at 290 nm * max. Radiation (saturation limit) at peak is 18 w/cm2, minimum radiation (resolution limit) is 1.8 mw/cm2 * applications: uv hardening control and other very high uv radiation sources Sic uv photodetector tocon-abc10 specifications Spectral characteristics Typical responsivity at peak wavelength: 0.28 mv/mw/cm2 Wavelength of max. Spectral responsivity: 290nm Responsivity range: 227 360nm General characteristics (t=25'c, vsupply=+5 v) Supply voltage: 2.5 - 5v Dark offset voltage: 50âµv Temperature coefficient at peak: < -0.3%/k Current consumption: 150âµa Bandwidth (-3 db): 15hz Risetime (10-90%): 0, 069s (other risetimes on request) Maximum ratings Operating temperature: -25 +85'c Storage temperature: -40 +100'c Soldering temperature (3s): 300'c
Properties of the TOCON-ABC10 Broadband SiC based UV photodetector in TO5 housing with attenuator 0 to 5 V voltage output peak wavelength at 290 nm max. radiation (saturation limit) at peak is 18 W/cm2, minimum radiation (resolution limit) is 1.8 mW/cm2 Applications: UV hardening control and other very high UV radiation sources
Properties of the sic uv photodetector tocon-abc1 * broadband sic based uv photodetector in to5 housing with concentrator lens cap * 0 - 5 v voltage output * peak wavelength at 280 nm * max. Radiation (saturation limit) at peak is 18 nw/cm2, minimum radiation (resolution limit) is 1.8 pw/cm2 * applications: very low uv radiation, flame detection Specifications Typical responsivity at peak wavelength: 280 mv/nw/cm2 Wavelength of max. Spectral responsivity: 280 nm Responsivity range (s=0.1*smax): 221 - 358 nm Supply voltage: 2.5 - 5 v Dark offset voltage: 700 uv Temperature coefficient at peak: < -0.3 %/k Current consumption: 150 Bandwidth (-3 db): 15 hz Risetime (10-90%): 0.182 s Operating temperature: -25 - +85'c Storage temperature: -40 - +100'c Soldering temperature (3s): 300'c
Properties of the TOCON_ABC1 Broadband SiC based UV photodetector in TO5 housing with concentrator lens cap 0 to 5 V voltage output peak wavelength at 280 nm max. radiation (saturation limit) at peak is 18 nW/cm2, minimum radiation (resolution limit) is 1.8 pW/cm2 Applications: very low UV radiation, flame detection
TOCON_C2 UVC-only SiC based UV photodetector with integrated amplifier Properties of the TOCON_C2 UV Photodetector * UVC-only SiC based UV photodetector in TO5 housing with concentrator lens cap * 0 - 5 V voltage output * peak wavelength at 275 nm * max. radiation (saturation limit) at 254 nm is 180 nW/cm2, minimum radiation (resolution limit) is 18 pW/cm2 * Applications: low UVC radiation detection, occupational safety TOCON_C2 UV Photodetector Specifications Typical Responsivity at Wavelength 254 nm: 28mV/nW/cm2 Wavelength of max. Spectral Responsivity: 275nm Responsivity Range: 225 - 287nm Supply Voltage: 2.5 - 5V Dark Offset Voltage: 50µV Temperature Coefficient at Peak: < -0.3%/K Current Consumption: 150µA Bandwidth (-3 dB): 15Hz Risetime (10-90%): 0.075s Operating Temperature: -25 ~ +85'C Storage Temperature: -40 ~ +100'C Soldering Temperature (3s): 300'C
Sic uv photodiode sg01m-5lens Concentrator lens sic based uv photodiode avirtual = 11.0 mm2 Properties of the sg01m-5lens sic uv photodiode * broadband uva+uvb+uvc, ptb reported high chip stability, for very weak radiation * radiation sensitive area a = 11.0 mm2 * to5 hermetically sealed metal housing with concentrator lens, 1 isolated pin and 1 case pin * 10âµw/cm2 peak radiation results a current of approx. 140 na Specifications Typical responsivity at peak wavelength: 0.130/aw Wavelength of max. Spectral responsivity: 280 nm Responsivity range (s=0.1*smax): 221 - 358 nm Sensitive area (chip size = 0.20 mm2): 11.0 mm2 Dark current (1v reverse bias): 0.7 fa Capacitance: 50 pf Short circuit (10uw/cm2 at peak): 140 na Temperature coefficient: < 0.1 %/k Operating temperature: -55 - +170 'c Storage temperature: -55 - +170 'c Soldering temperature (3s): 260 'c Reverse voltage: 20 v
SG01XL-5 Broadband SiC based UV photodiode A = 7,6 mm2 Properties of the SG01XL-5 UV Photodiode * Broadband UVA+UVB+UVC, PTB reported high chip stability * Active Area A = 7.6 mm2 * TO5 hermetically sealed metal housing, short cap, 1 isolated pin and 1 case pin * 10µW/cm2 peak radiation results a current of approx. 99 nA SG01XL-5 UV Photodiode Specifications Typical Responsivity at Peak Wavelength: 0.130/AW Wavelength of max. Spectral Responsivity: 280nm Responsivity Range: 221 - 358nm Active Area: 7.6mm2 Dark Current (1V reverse bias): 25.3fA Capacitance: 1900pF Short Circuit (10µW/cm2 at peak): 99nA Temperature Coefficient: < 0.1%/K Operating Temperature: -55 ~ +170°C Storage Temperature: -55 ~ +170°C Soldering Temperature (3s): 260°C Reverse Voltage: 20V
SG01L-5 Broadband SiC based UV photodiode A = 1.0 mm2 Properties of the SG01L-5 UV Photodiode * Broadband UVA+UVB+UVC, PTB reported high chip stability * Active Area A = 1.0 mm2 * TO5 hermetically sealed metal housing, short cap, 1 isolated pin and 1 case pin * 10µW/cm2 peak radiation results a current of approx. 13 nA SG01L-5 UV Photodiode Specifications Typical Responsivity at Peak Wavelength: 0.130/AW Wavelength of max. Spectral Responsivity: 280nm Responsivity Range: 221 - 358nm Active Area: 1.0mm2 Dark Current (1V reverse bias): 3.3fA Capacitance: 250pF Short Circuit (10µW/cm2 at peak): 13nA Temperature Coefficient: < 0.1%/K Operating Temperature: -55 ~ +170'C Storage Temperature: -55 ~ +170'C Soldering Temperature (3s): 260'C Reverse Voltage: 20V
SG01S-18S Broadband SiC based UV photodiode A = 0.06 mm2 Properties of the SG01S-18S UV Photodiode * Broadband UVA+UVB+UVC, PTB reported high chip stability * Active Area A = 0.06 mm2 * TO18 hermetically sealed metal housing, short cap, 1 isolated pin and 1 case pin *10mW/cm2 peak radiation results a current of approx. 780 nA SG01S-18S UV Photodiode SpecIfication Typical Responsivity at Peak Wavelength: 0.130/AW Wavelength of max. Spectral Responsivity: 280nm Responsivity Range: 221 - 358nm Active Area: 0.06 mm2 Dark Current (1V reverse bias): 0.2fA Capacitance: 15pF Short Circuit (10mW/cm2 at peak): 780nA Temperature Coefficient: < 0.1%/K Operating Temperature: -55 ~ +170'C Storage Temperature: -55 ~ +170'C Soldering Temperature (3s): 260'C Reverse Voltage: 20V
SG01L-5LENS Concentrator lens SiC based UV photodiode Avirtual = 55 mm2 Properties of the SG01L-5LENS UV Photodiode * Broadband UVA+UVB+UVC, PTB reported high chip stability, for flame detection * Radiation sensitive area A = 55 mm2 * TO5 hermetically sealed metal housing with concentrator lens, 1 isolated pin and 1 case pin * 10µW/cm2 peak radiation results a current of approx. 700 nA SG01L-5LENS UV Photodiod Specifications * Typical Responsivity at Peak Wavelength: 0.130/AW * Wavelength of max. Spectral Responsivity: 280nm Responsivity Range: 221 - 358nm * Sensitive Area (chip size = 0.20 mm2): 55mm2 * Dark Current (1V reverse bias): 3.5fA * Capacitance: 250pF * Short Circuit (10µW/cm2 at peak): 700nA * Temperature Coefficient: < 0.1%/K * Operating Temperature: -55 ~ +170'C * Storage Temperature: -55 ~ +170'C * Soldering Temperature (3s): 260'C * Reverse Voltage: 20V
Concentrator lens sic based uv photodiode sensor sg01d-5lens Avirtual = 11, 0 mm2 Properties of the sg01d–5lens uv photodiode • broadband uva+uvb+uvc, ptb reported high chip stability, for flame detection • radiation sensitive area a = 11, 0 mm2 • to5 hermetically sealed metal housing with concentrator lens, 1 isolated pin and 1 case pin • 10µw/cm2 peak radiation results a current of approx. 350 na About the material silicon carbide (sic) Sic provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make sic the best available material for visible blind semiconductor uv detectors. The sic detectors can be permanently operated at up to 170°c (338°f). The temperature coefficient of signal responsivity) is also low, < 0, 1%/k. Because of the low noise (dark current in the fa range), very low uv radiation intensities can be measured reliably. Please note that this device needs an appropriate amplifier (see typical circuit on page 3). Options Sic photodiodes are available with seven different active chip areas from 0, 06 mm2 up to 36 mm2. Standard versionis broadband uva-uvb-uvc. Four filtered versions lead to a tighter sensitivity range. All photodiodes have a hermetically sealed metal housing (to type), either a 5, 5 mm diameter to18 housing or a 9, 2 mm to5 housing. Further option is either a 2 pin header (1 isolated, 1 grounded) or a 3 pin header (2 isolated, 1 grounded).
SG01M-B18 UVB-only SiC based UV photodiode A = 0.20 mm2 Properties of the SG01M-B18 UV Photodiode * UVB-only sensitivity, PTB reported high chip stability * Active Area A = 0.20 mm2 * TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin * 10mW/cm2 peak radiation results a current of approx. 2500 nA SG01M-B18 UV Photodiode Specifications Typical Responsivity at Peak Wavelength: 0.125/AW Wavelength of max. Spectral Responsivity: 280nm Responsivity Range: 231 - 309nm Active Area: 0.20mm2 Dark Current (1V reverse bias): 0.7fA Capacitance: 50pF Short Circuit (10mW/cm2 at peak) : 2500nA Temperature Coefficient: < 0.1%/K Operating Temperature: -55 ~ +170°C Storage Temperature: -55 ~ +170°C Soldering Temperature (3s): 260°C Reverse Voltage: 20V
SG01M-B5 UVB-only SiC based UV photodiode A = 0.20 mm2 Properties of the SG01M-B5 UV Photodiode * UVB-only sensitivity, PTB reported high chip stability * Active Area A = 0.20 mm2 * TO5 hermetically sealed metal housing, 1 isolated pin and 1 case pin * 10mW/cm2 peak radiation results a current of approx. 2500 nA SG01M-B5 UV Photodiode Specifications Typical Responsivity at Peak Wavelength: 0.125/AW Wavelength of max. Spectral Responsivity: 280nm Responsivity Range: 231 to 309nm Active Area: 0.20mm2 Dark Current (1V reverse bias): 0.7fA Capacitance: 50pF Short Circuit (10mW/cm2 at peak): 2500nA Temperature Coefficient: < 0.1%/K Operating Temperature: -55 ~ +170'C Storage Temperature: -55 ~ +170'C Soldering Temperature (3s): 260'C Reverse Voltage: 20V
Properties of the sg01d-a18 uv photodiode * uva-only sensitivity, ptb reported high chip stability * active area a = 0.50 mm2 * to18 hermetically sealed metal housing, 1 isolated pin and 1 case pin * 10µw/cm2 peak radiation results a current of approx. 1.85 na Spectral characteristic Typical responsivity at peak wavelength: 0.037/aw Wavelength of max. Spectral responsivity: 331nm Responsivity range: 309 - 367nm Active area: 0.50mm2 Dark current (1v reverse bias): 1.7fa Capacitance: 125pf Short circuit (10µw/cm2 at peak): 1.85na Temperature coefficient: < 0.1%/k Maximum rating Operating temperature: -55 - +170'c Storage temperature: -55 - +170'c Soldering temperature (3s): 260'c Reverse voltage: 20v
SG01XL-5 Broadband SiC based UV photodiode A = 7,6 mm2 Properties of the SG01XL-5 UV Photodiode * Broadband UVA+UVB+UVC, PTB reported high chip stability * Active Area A = 7.6 mm2 * TO5 hermetically sealed metal housing, short cap, 1 isolated pin and 1 case pin * 10µW/cm2 peak radiation results a current of approx. 99 nA SG01XL-5 UV Photodiode Specifications Typical Responsivity at Peak Wavelength: 0.130/AW Wavelength of max. Spectral Responsivity: 280nm Responsivity Range: 221 - 358nm Active Area: 7.6mm2 Dark Current (1V reverse bias): 25.3fA Capacitance: 1900pF Short Circuit (10µW/cm2 at peak): 99nA Temperature Coefficient: < 0.1%/K Operating Temperature: -55 ~ +170'C Storage Temperature: -55 ~ +170'C Soldering Temperature (3s): 260'C Reverse Voltage: 20V
SG01M-18S Broadband SiC based UV photodiode A = 0.20 mm2 Properties of the SG01M-18S UV Photodiode * Broadband UVA+UVB+UVC, PTB reported high chip stability * Active Area A = 0.20 mm2 * TO18 hermetically sealed metal housing, short cap, 1 isolated pin and 1 case pin * 10mW/cm2 peak radiation results a current of approx. 2600 nA SG01M-18S UV Photodiode Specifications Typical Responsivity at Peak Wavelength: 0.130/AW Wavelength of max. Spectral Responsivity: 280nm Responsivity Range: 221 - 358nm Active Area: 0.20mm2 Dark Current (1V reverse bias): 0.7fA Capacitance: 50pF Short Circuit (10mW/cm2 at peak): 2600nA Temperature Coefficient: < 0.1%/K Operating Temperature: -55 ~ +170°C Storage Temperature: -55 ~ +170°C Soldering Temperature (3s): 260°C Reverse Voltage: 20V
Sg01l-5lens Concentrator lens sic based uv photodiode avirtual = 55 mm2 Properties of the sg01l-5lens uv photodiode Broadband uva+uvb+uvc, ptb reported high chip stability, for flame detection Radiation sensitive area a = 55 mm2 To5 hermetically sealed metal housing with concentrator lens, 1 isolated pin and 1 case pin 10âµw/cm2 peak radiation results a current of approx. 700 na Sg01l-5lens uv photodiod specifications Sensitive area: 55 mm2 Dark current: 3.5 fa Capacitance: 250 pf Responsivity range: 221 - 358 nm Operating temperature: -55 ~ +170â°c Storage temperature: -55 ~ +170â°c Soldering temperature (3s): 260â°c Reverse voltage: 20 v
Properties of the SG01M-5LENS UV photodiode Broadband UVA+UVB+UVC, PTB reported high chip stability, for very weak radiation Radiation sensitive area A = 11.0 mm2 TO5 hermetically sealed metal housing with concentrator lens, 1 isolated pin and 1 case pin 10uW/cm2 peak radiation results a current of approx. 140 nA
Properties of the SG01D-5LENS UV photodiode Broadband UVA+UVB+UVC, PTB reported high chip stability, for very weak radiation Radiation sensitive area A = 11.0 mm2 TO5 hermetically sealed metal housing with concentrator lens, 1 isolated pin and 1 case pin 10uW/cm2 peak radiation results a current of approx. 350 nA
SG01S-B18 UVB-only SiC based UV photodiode A = 0.06 mm2 Properties of the SG01S-B18 UV Photodiode * UVB-only sensitivity, PTB reported high chip stability * Active Area A = 0.06 mm2 * TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin * 10mW/cm2 peak radiation results a current of approx. 750 nA SG01S-B18 UV Photodiode Specifications Typical Responsivity at Peak Wavelength: 0.125/AW Wavelength of max. Spectral Responsivity: 280nm Responsivity Range: 231 - 309nm Active Area: 0.06mm2 Dark Current (1V reverse bias): 0.2fA Capacitance: 15pF Short Circuit: 750nA Temperature Coefficient: < 0.1%/K Operating Temperature: -55 ~ +170°C Storage Temperature: -55 ~ +170°C Soldering Temperature (3s): 260°C Reverse Voltage: 20V
