UV-A Sensor GUVA-C32SM
GENERAL DESCRIPTION
GUVA-C32SM supports integrated functions of ultraviolet light sensors such that can be easily configured and used in user applications.
GUVA-C32SM comprises photodiodes, amplifiers, ADC, digital control logic and I2C interface circuit.GUVA-C32SM receives UVA and outputs digital count according to the intensity. Power consumption can be minimized by proper use of power management mode.
FEATURES
- UVA sensing with 16-bit resolution
- Support UV index measurement (0 - 16)
- Programmable gain and integration time
- I2C slave interface up to 400KHz
- Power management modes
- Shutdown current : 0.8uA typical
- Supply voltage of 2.2V to 3.6V
- 2.0mm x 2.3mm x 1.4mm ,4-pin COBpackage
APPLICATIONS
Smartphone, Wearable devices, IoT, watch, weather station, bicycle navigation, gaming, accessary
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1. Uv sensor guva-c22sd features Gallium nitride based material Schottky-type photodiode Photovoltaic mode operation Good visible blindness High responsivity & low dark current 2. Uv sensor guva-c22sd applications Uv index monitoring Uv-a lamp monitoring 3. Uv sensor guva-c22sd absolute maximum ratings Storage temperature: -40~90'c Operating temperature: -30~85'c Reverse voltage: 5v Forward current: 1ma Optical source power range: 0.1âµ~100m w/cm2 Soldering temperature: 260'c 4. Uv sensor guva-c22sd characteristics (at 25'c) Dark current: 1na max Temperature coefficient: 0.08%/'c Responsivity: 0.14a/w Spectral detection range: 240~370nm Active area: 0.076mm2
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1.Features Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation Good Visible Blindness High Responsivity & Low Dark Current 2.Applications UV Index Monitoring UV-A Lamp Monitoring 3. Absolute Maximum Ratings Storage Temperature: -40~90'C Operating Temperature: -30~85'C Reverse Voltage: 5V Forward Current: 1mA Optical Source Power Range: 0.1u~100m W/cm2 Soldering Temperature: 260'C 4. Characteristics (at 25'C) Dark Current: 1nA Temperature Coefficient: 0.08%/'C Responsivity: 0.14A/W Spectral Detection Range: 240~370ã?? Active area: 0.076mm2
1.Features Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation Good Visible Blindness High Responsivity & Low Dark Current 2.Applications UV Index Monitoring UV-A Lamp Monitoring 3.Specifications Spectral Detection Range: 240-370nm Active area: 0.076mm2 Package: COB 2418 PKG Chip size: 0.4mm Responsivity: 0.14 A/W Storage Temperature: -40 ~ +90'C Operating Temperature: -30 ~ +85'C
1.Features - chip size:1.4mm - package type to 46 pkg -gallium nitride based material -schottky-type photodiode -photovoltaic mode operation -good visible blindness -high responsivity & low dark current 2. Applications -full uv band monitoring -uv-a lamp monitoring 3.Specifications -spectral detection range: 220~370nm -active area: 1.536 mm2 -responsivity : 0.18a/w -dark current:20na -photo current: 2.8~3.4ua Uva lamp, 1mw/cm2
1. Features Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation Good Visible Blindness High Responsivity & Low Dark Current 2. Applications Full UV Band Monitoring UV-A Lamp Monitoring 3. Absolute Maximum Ratings Storage Temperature: -40~90'C Operating Temperature: -30~85'C Reverse Voltage: 5V Forward Current: 1mA Optical Source Power Range: 0.01µ~100m W/cm2 Soldering Temperature: 260'C 4. Characteristics (at 25'C) Dark Current: 20nA Photo Current: 2.8~3.4µA, 3.1µA(Typ) Temperature Coefficient: 0.05%/'C Responsivity: 0.18A/W Spectral Detection Range: 220~370nm Active area: 1.536mm2
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