Guva-C22Sd Uv-A Sensor

1.Features Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation Good Visible Blindness High Responsivity & Low Dark Current 2.Applications UV Index Monitoring UV-A Lamp Monitoring 3.Specifications Spectral Detection Range: 240-370nm Active area: 0.076mm2 Package: COB 2418 PKG Chip size: 0.4mm Responsivity: 0.14 A/W Storage Temperature: -40 ~ +90'C Operating Temperature: -30 ~ +85'C

UV-A Sensor GUVA-C32SM GENERAL DESCRIPTION GUVA-C32SM supports integrated functions of ultraviolet light sensors such that can be easily configured and used in user applications. GUVA-C32SM comprises photodiodes, amplifiers, ADC, digital control logic and I2C interface circuit.GUVA-C32SM receives UVA and outputs digital count according to the intensity. Power consumption can be minimized by proper use of power management mode. FEATURES - UVA sensing with 16-bit resolution - Support UV index measurement (0 - 16) - Programmable gain and integration time - I2C slave interface up to 400KHz - Power management modes - Shutdown current : 0.8uA typical - Supply voltage of 2.2V to 3.6V - 2.0mm x 2.3mm x 1.4mm ,4-pin COBpackage APPLICATIONS Smartphone, Wearable devices, IoT, watch, weather station, bicycle navigation, gaming, accessary -

1.Features Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation Good Visible Blindness High Responsivity & Low Dark Current 2.Applications UV Index Monitoring UV-A Lamp Monitoring 3. Absolute Maximum Ratings Storage Temperature: -40~90'C Operating Temperature: -30~85'C Reverse Voltage: 5V Forward Current: 1mA Optical Source Power Range: 0.1u~100m W/cm2 Soldering Temperature: 260'C 4. Characteristics (at 25'C) Dark Current: 1nA Temperature Coefficient: 0.08%/'C Responsivity: 0.14A/W Spectral Detection Range: 240~370ã?? Active area: 0.076mm2

1.Features - chip size:1.4mm - package type to 46 pkg -gallium nitride based material -schottky-type photodiode -photovoltaic mode operation -good visible blindness -high responsivity & low dark current 2. Applications -full uv band monitoring -uv-a lamp monitoring 3.Specifications -spectral detection range: 220~370nm -active area: 1.536 mm2 -responsivity : 0.18a/w -dark current:20na -photo current: 2.8~3.4ua Uva lamp, 1mw/cm2

1. Features Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation Good Visible Blindness High Responsivity & Low Dark Current 2. Applications Full UV Band Monitoring UV-A Lamp Monitoring 3. Absolute Maximum Ratings Storage Temperature: -40~90'C Operating Temperature: -30~85'C Reverse Voltage: 5V Forward Current: 1mA Optical Source Power Range: 0.01µ~100m W/cm2 Soldering Temperature: 260'C 4. Characteristics (at 25'C) Dark Current: 20nA Photo Current: 2.8~3.4µA, 3.1µA(Typ) Temperature Coefficient: 0.05%/'C Responsivity: 0.18A/W Spectral Detection Range: 220~370nm Active area: 1.536mm2

UV Flame sensor is fire detect sensor which detecs ultraviolet rays of a flame instantly and output warning signal outside. By using emergency call equipment or adjusting the sensor connection, SKH-)$& can supervise multiple sensors at a long range.

1. Ftatures - Chip size: 0.4mm, SMD 3528 PKG - Aluminium Gallium Nitride Based Material - Schottky-type Photodiode - Photovoltaic Mode Operation - Good Visible Blindness - High Responsivity and Low Dark Current 2. Application UV Index Monitoring 3. Absolute Maximum Ratings Storage Temperature: -40~90'C Operating Temperature: -30~85'C Reverse Voltage: 3V Forward Current: 1mA Optical Source Power Range: 0.1u~100m W/cm2 Soldering Temperature: 260'C 5. Characteristics (at 25'C) Dark Current: 1nA Temperature Coefficient: 0.1%/'C Responsivity: 0.11A/W Spectral Detection Range: 240~320nm Active area: 0.076mm2 -

1. Features Aluminium Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation Good Visible Blindness High Responsivity & Low Dark Current 2. Applications UV Index Monitoring 3. Absolute Maximum Ratings Storage Temperature: -40~90'C Operating Temperature: -30~85'C Reverse Voltage: 3V Forward Current: 1mA Optical Source Power Range: 0.1µ~100m W/cm2 Soldering Temperature: 260'C 4. Characteristics (at 25'C) Dark Current: 1nA Temperature Coefficient: 0.1%/'C Responsivity: 0.11A/W Spectral Detection Range: 240~320nm Active area: 0.076mm2

1. Uv sensor guvb-t11gd-l features Aluminium gallium nitride based material Schottky-type photodiode Photovoltaic mode operation Good visible blindness High responsivity & low dark current 2. Uv sensor guvb-t11gd-l applications Uv-b lamp monitoring Uv-b led monitoring 3. Uv sensor guvb-t11gd-l absolute maximum ratings Storage temperature: -40~90'c Operating temperature: -30~85'c Reverse voltage: 3v Forward current: 1ma Optical source power range: 0.01âµ~100m w/cm2 Soldering temperature: 260'c 4. Uv sensor guvb-t11gd-l characteristics (at 25'c) Dark current(max.): 20na Photo current(typ.): 1.5 Temperature coefficient: 0.1%/'c Responsivity: 0.13a/w Spectral detection range: 220~320nm Active area: 1.536mm2