Multicrystalline silicon wafers
1.Material: multicrystalline silicon
2.Growth method: directional solidification
3.Conductivity type: p-type (boron doped), astm f42
4.Oxygen concentration: n 1, 0x1017 at./cm3, astm f 121
5.Carbon concentration: n 1x1018 at./cm3, astm f 121
* oxygen content measurement by astm 1188 and used calculation coefficient for ppm atomic is 4, 9 and and for at/cm3 is 2, 45e+17.
6.Square side: (156.0 0.5) mm
7.Symmetry as per the drawing in the enclosure no. 1
8.Thickness: (200 30) µm, astm f 533
9.Ttv: < 50 µm, astm f657
10.Bow < 50 µm, astm f 534
11.Surface saw damage depth µm < 20 (< 15 typically)
12.Saw traces µm <5
13.Resistivity: 0.5 ¿c 2.0 Ω•cm, astm f 43
14.Minority carriers lifetime: > 2 µs, astm f 28
15.Surface: as-cut and cleaned; visible contamination, oil or grease, finger prints, soap stains, slurry stains, epoxy/water stains, cracks are not allowed; edge chips under 1 mm from the edge of the wafer are allowed.
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16.Customer may request to receive reference samples
17.Wafers are being stacked into batches of 50-100 wafers each. Then it is sealed into polyethylene film. Protective paper among wafers is upon customer request. 500 -600 wafers in total are being packed into styrofoam box. Styrofoam boxes are being packed into pasteboard cases. Wafers are being packed in such a manner as to ensure minimal damage to the product during transportation.
18.All polystyrene boxes of wafers are identified with: box number; type of wafer; number of wafers per box; all contributing ingots numbers; thickness of wafers; date of packing / output inspection.
Geometry:
Square side angle:900, 5
Chamfer: 1, 5 mm0, 5mm at 452
