Supplier: Silicon materials such as silicon wafers, broken wafers, silicon ingots, chunks, solar wafers, solar cell, and silicon granules.
Supplier: Solar cells, broken solar cells, IC wafer, polycrystalline
Supplier: solar cell scrap like silicon wafer broken solar cells
Supplier: Silicon wafer, solar wafer scrap, broken solar wafer, poly silicon, broken solar cells, copper scrap.
Buyer: Silicon wafer, solar wafer scrap, broken solar wafer, poly silicon, broken solar cells, copper scrap.
CPV Solar Power Prisms is used to collect the sunlight, for solar condenser, solar energy concentrating photovoltaic (CPV) system, solar power generation, etc., which is the main optical component when solar power transform to electric energy. Solar Engery Prism Specifications Material BK7, UV Fused Silica, or customer request. Size 0.5mm-300mm Size tolerance +/-0.1mm or customer request Clear Aperture 90% S/D 60-40 40-20 20/10 10/5 Flatness 1/10lambda at 632.80nm Chamfer 0.25mmx45 Angle tolerance
Final In stocked: 1,000kg Unit price: USD 700/KG FOB TERM OR CIF TERM
Product Name 182 MBB Half-cell Mono Perc Module Maximum Efficiency 21.30% Warranty 12 years product workmanship warranty, 25 years linear power output warranty Front Glass 3.2mm, highly transparent tempered glass with anti-reflective coating Power Range 390-550W Brand Name LESSO Module Dimension 2278 1134 35mm Panel Size 2.58 Certificate CE/TUV/CQC ODM/OEM OEM/ODM Weight 28kg Frame Anodized aluminium alloy Working Temperature 40 70 Cables 4mm PV cable, 300mm or customized length Maximum System Voltage 1500V DC Nominal Maximum Fuse Current 25A
The production process is simple, cost-effective, and reduces silicon waste High conversion efficiency, low fragmentation rate and low optical attenuation Manufacturing Specialization, Intelligence and Greening Customized products to meet customer needs Name: High efficiency polysilicon wafer Technology : Diamond wire cutting Type : P type Resistance:1~3 minority carrier:>2 Hem width:157.00~157.25mm Thickness:200±20μm Transfer efficiency:>18.8%
Technology : Diamond wire cutting Type : P type Resistance:1~3s minority carrier:>2 s Hem width:157.00~157.25mm Thickness:200±20m Transfer efficiency:>18.8% The production process is simple, cost-effective, and reduces silicon waste High conversion efficiency, low fragmentation rate and low optical attenuation Manufacturing Specialization, Intelligence and Greening Customized products to meet customer needs
