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The THB6064MQ is a commonly used electronic component manufactured by Toshiba Semiconductor and Storage. It has a high popularity and a balanced supply and demand status. With a fake threat of 32% in the open market, this component is reliable and widely available. It can be used in various applications in the electronics industry.
We are manufacturing all kind of Brass Electrical & Electronics components for many applications. We produce Brass Electrical & Electronics components as per customer s requirement which change accordingly customer application.
We offer Brass Electrical & Electronics components with natural or nickel plated finish. Our products range in Brass Electrical & Electronics parts include plug pins, pin sockets, sockets, brass neutral link and terminal block for all types of panel board switch gears and electrical switch boards.
We are manufacturing all kind of Brass Electrical & Electronics components for many applications. We produce Brass Electrical & Electronics components as per customer s requirement which change accordingly customer application.
We offer Brass Electrical & Electronics components with natural or nickel plated finish. Our products range in Brass Electrical & Electronics parts include plug pins, pin sockets, sockets, brass neutral link and terminal block for all types of panel board switch gears and electrical switch boards.
INDIUM PHOSPHIDE (InP) WAFERS are semiconductor materials made of indium phosphide, a compound semiconductor that is widely used in high-frequency and optoelectronic applications. Due to its efficient electron mobility and direct bandgap properties, InP is favored for devices such as:
High-speed electronics
Laser diodes
Photodetectors
Telecommunications applications, including optical fiber communication
We offer the following InP Wafers:
Undoped InP Wafers: These are pure InP with no intentional doping, used in various applications where intrinsic properties are required.
N-type InP Wafers: Doped with donor impurities (such as tellurium) to increase electron concentration, useful in transistors and high-speed electronics.
P-type InP Wafers: Doped with acceptor impurities (such as zinc) to create holes in the semiconductor, used in light-emitting devices and other optoelectronics.
InP Substrates: Used as a base for growing other semiconductor materials in heterostructures for various applications.
InP Membrane Wafers: Thin layers of InP used for specific applications, including applications in flexible electronics and advanced photonic devices.
InP-based Quantum Dot Wafers: Engineered to create quantum dots that can be used in photonic and optoelectronic devices for enhanced performance.
Features:
1) frequency range: 10mhz-220mhz
2) standard frequency: 10mhz, 12.8mhz, 100mhz
3) crystal cut: at and sc
4) aging: <+50ppb/year
5) frequency stability vs operating temperature range:
A) 0pc~55pc, +150ppb
B) -10pc~60pc, +150ppb
C) -20pc~70pc, +50ppb
D) -40pc~70pc, +100ppb
6) warm-up: +100ppm in 1min
7) phase noise: typical
A) -120dbc/hz10hz
B) -145dbc/hz100hz
C) -155dbc/hz1, 000hz
D) -160dbc/hz10, 000hz
8) power supply: 12v, 15v
A) turn on 25pc: 400ma, 400ma
B) steady state 25pc: 150ma, 150ma
9) storage temperature: -55pc~85pc
10) tuning slope: positive
11) output supply: sunwave
12) output power: >7dbm
13) output load: 50 ohm
14) harmonics: -30dbc
15) subharmonics: <75dbc
Packing:
Standard packing
38 x 38 x 20mm
38 x 38 x 30mm
