Type Multi crystalline silicon wafer ( B grade)
Size(mm) 156.6 (+0.0 to -0.5).
P/N type P
Do pant Boron
Resistivity(ohmcm) 0.5 û 5.0
Carbon Content 5.0x1017 atoms per cm3
Oxygen Content 3.0x1017 atoms per cm3
Life Time > 1.5 microsecond.

T T V less than or equal 50 microm.

Thickness 200 microm(+/- 30 microm)
Production(Casting) method EMC
Diffusion length greater than or equal to 50 micrometer
Conner angle(degree) 90.0 +/- 0.3
Beveled edge width 0.5 - 2 mm
Appearance Chip ( Width 0.8 mm, less than or equal 4 points.