Application: Medical Purity: >99.99% Type: Zinc Ingot Alloy: Non-alloy Powder: Not Powder Packing: Pallet
99.995 Zinc Ingot with Large Stock Application: Aviation, Electronics, Industrial, Medical, Chemical Standard:JIS, GB, DIN, BS, ASTM, AISI Purity: Custom Made Type: Zinc Bar Alloy: Custom Made Powder: Not Powder
Zinc Purity and Impurities Specification Zinc Purity: Range 1: 99.96% - 99.97% Range 2: 99.97% - 99.98% Range 3: 99.98% - 99.99% Impurities: Pb (Lead) For Range 1: Min 230 ppm - Max 300 ppm For Range 2: Min 160 ppm - Max 230 ppm For Range 3: Min 75 ppm - Max 160 ppm Fe (Iron) For Range 1: Min 25 ppm - Max 30 ppm For Range 2: Min 20 ppm - Max 25 ppm For Range 3: Min 10 ppm - Max 20 ppm Cu (Copper) For Range 1: Min 15 ppm - Max 20 ppm For Range 2: Min 10 ppm - Max 15 ppm For Range 3: Both Min and Max at 10 ppm Cd (Cadmium) For all ranges (Range 1, 2, and 3): Min 5 ppm - Max 10 ppm.
We can supply Zinc Ingots from China. Please send us your request. Thank you.
Pb% < 0.003 Cd% < 0.003 Fe% < 0.002 Sn% < 0.001 Cu% < 0.001 Al% < 0.001 Zn% > 99.995 Galvanization and other protective coatings. Anodes for electrogalvanizing and anodes for cathodic protection. Zinc Powder, Oxygen Zinc and other chemical products. Zinc based alloys. Brasses. Rolled Zinc.
We Can Supply 1000 Tons Per Month Of Eaf Dust With 30-32% ZINC Concentration Located In Mexico
Chemical Specification (Component) for the custom in (Zn) 99,995% (Pb) 0,6% (Cd) 0,02% (Fe) 0,08% (Cu) 0,07% Zinc is specified as below: Aluminum doped zinc oxide (AZO) films are prepared by rf magnetron sputtering on glass or Si substrates using specifically designed ZnO targets containing different amount of Al2O3 powder as the Al doping source. The structural, electrical, and optical properties of the AZO films are investigated in terms of the preparation conditions, such as the Al2O3 content in the target, rf power, substrate temperature and working pressure. The crystal structure of the AZO films is hexagonal quartzite. The orientation, regardless of the Al content, is along the c axis perpendicular to the substrate. The doping concentration in the film is 1.9 at.?% for 1 wt?% Al2O3 target, 4.0 at.?% for 3 wt?% Al2O3 target, and 6.2 at.?% for 5 wt?% Al2O3 target. The resistivity of the AZO film prepared with the 3 wt?% Al2O3target is ~ 4.7Ã?10-4 O?cm, and depends mainly on the carrier concentration. The optical transmittance of a 1500-Ã?-thick film at 550 nm is ~ 90%. The optical band gap depends on the Al doping level and on the microstructure of the films, and is in the range of 3.46?3.54 eV. The optical band gap widening is proportional to the one-third power of the carrier concentration.
