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GERMANIUM(Ge) WAFERS are semiconductor materials made from Germanium, a group IV element with properties that make it useful in various electronic applications. Historically, Germanium was one of the first materials used in transistors and is still utilized in some specialized applications today, particularly in high-speed electronics and photonics due to its favorable electronic and optical properties.

We offer the following Germanium Wafers:
Undoped Germanium Wafers: Pure Germanium with no intentional doping. These wafers are often used in experimental and research settings to investigate intrinsic semiconductor properties.
N-type Germanium Wafers: Doped with donor impurities (such as phosphorus or arsenic) to increase the concentration of electrons. These wafers are commonly used in transistor applications and other electronic circuits.
P-type Germanium Wafers: Doped with acceptor impurities (such as boron or gallium) to create electronic holes. P-type wafers are often used in diode and transistor applications.
High Purity Germanium Wafers: Extremely low levels of impurities, often used in specialized applications such as radiation detectors and other high-performance devices.
Germanium-on-Insulator (GOI) Wafers: A structure where a thin layer of germanium is bonded to an insulating substrate. This is used to improve device performance and reduce parasitic capacitance.
Thin-Film Germanium Wafers: Thin layers of Germanium material that are used in advanced applications such as flexible electronics and integrated circuits.