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High Efficiency P Type Polysilicon Wafer

(1.1)
Supplier From China
Jun-05-19

Advantage of
High efficiency P Type polysilicon wafer
The production process is simple, cost-effective, and reduces silicon waste
High conversion efficiency, low fragmentation rate and low optical attenuation
Manufacturing Specialization, Intelligence and Greening
Customized products to meet customer needs

Technology : Diamond wire cutting
Type : P type
Resistance:1~3s
minority carrier:>2 s
Hem width:157.00~157.25mm
Thickness:200±20m
Transfer efficiency:>18.8%

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Jun-06-19
High Efficiency P Type Polysilicon Wafer

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Advantage of
156x156mm 200um High efficiency P Type polysilicon wafer Manufacturer
The production process is simple, cost-effective, and reduces silicon waste
High conversion efficiency, low fragmentation rate and low optical attenuation
Manufacturing Specialization, Intelligence and Greening
Customized products to meet customer needs
Name: High efficiency polysilicon wafer

Technology : Diamond wire cutting
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Name: High efficiency polysilicon wafer
Technology : Diamond wire cutting
Type : P type
Resistance:1~3μs
minority carrier:>2 μs
Hem width:157.00~157.25mm
Thickness:200±20μm
Transfer efficiency:>18.8%
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The production process is simple, cost-effective, and reduces silicon waste
High conversion efficiency, low fragmentation rate and low optical attenuation
Manufacturing Specialization, Intelligence and Greening
Customized products to meet customer needs

Hengxing company website: https://hengxingsteelwire.com/
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  Henan Hengxing PC Steel Product Co., Ltd
Supplier From Zhengzhou, Henan, China
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Advantage of
156x156mm 200um High efficiency silicon wafers
The production process is simple, cost-effective, and reduces silicon waste
High conversion efficiency, low fragmentation rate and low optical attenuation
Manufacturing Specialization, Intelligence and Greening
Customized products to meet customer needs
Name: High efficiency polysilicon wafer
Technology : Diamond wire cutting
Type : P type
Resistance:1~3
minority carrier:>2
Hem width:157.00~157.25mm
Thickness:200±20μm
Transfer efficiency:>18.8%
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