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Ceramic Capacitors T.c. Type (Class I)

Supplier From Taiwan
Aug-16-14

T.C. Type (class i)
The capacitors have characteristics of predictable linear capacitance
Change versus temperature which are suitable for temperature
Compensation of resonant circuit, filters, coupling and decoupling
In rf circuit where low losses and close capacitance tolerance
Are required.


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Gaas Wafers, WAFERS

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MOQ: 10  Pieces
Sample Available
Supplier From South Hackensack, New Jersey, United States
 
GaAs Wafers
Gallium Arsenide (GaAs) wafers are critical components in modern electronics and photonics due to their superior electrical and optical properties.

Here�¢??s a focused overview:

GaAs�¢?? is shorthand for Gallium Arsenide, a compound made up of two elements, and the semiconductor used to manufacture GaAs wafers. GaAs is used as a direct bandgap semiconductor, which in layman�¢??s terms, simply means that particles such as electrons can pass through components much quicker and with very little interference. This makes them particularly useful in optical devices because photons, the basic unit for all light, can pass through lenses with ease.

What are GaAs Wafers Use For?

The use of GaAs wafers is dictated by the capabilities of the compound. Because GaAs is a direct bandgap semiconductor, it is especially useful in sensitive electronic equipment that requires amplifying low frequencies. Some of the most common applications for GaAs wafers include:

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1, Operating Temp.Range, -20íµí½-+85íµ, í¬í¬,, 2, Capacitance, Within the specified Tolerance, Measured at 25íµ with 1í+ 0.1kHz and 1V (rms), 3, Temperature Characteristics, D, N4700, Compared with the, value measured at 25íµ,, the capacitance change from -25íµ to 85íµ should not exceed the limit specified., 4, Dissipation Factor, í_0.3úÑ, The same as No.2, 5, withstand voltage, No failure, Applied 1.5 times of rated voltage for 60 second., 6, Insulation Resistance(I.R.), >104MW, Measured with DC 1kV within 60í+5sec., 7, Life, Appearance, No marked defect,, Capacitance change, whthiní+20úÑ,, D.R., í_5úÑ,, I.R., 1000 Mª+min., Apply a DC voltage of 125% of the rated voltage for 100+24/-0 hrs. in silicon oil at 85í+2íµ. Post treatment: Capacitor should be stored for 24 hrs. at room condition.(Charge/Discharge currentí_50mA), 8, Humidity, (under Steady State), Appearance, No marked defect,, capacitance change, withiní+20úÑ,, D.R., í_5úÑ,, I.R., 1000 Mª+min.

Set the capacitor for 100-0+24 hrs at 40í+2íµ in 90 to 95% relative humidity.
Post-treatment: Capacitor should be stored for 24 hrs.at room condition.
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