Discrete Semiconductor Devices

We offer a wide range of Power Semiconductor devices.

Power Diodes (Stud/Flat Type) Silicon Diodes are electronic components that conduct current in only one direction. In function, they are similar to one-way valves. Silicon Diodes, using semiconductor materials such as silicon are used as voltage regulators, signal rectifiers, oscillators and signal modulators / demodulators. Semiconductor diodes consist of a PN junction having two terminals, an anode (+) and a cathode (-). Current flows from the anode to the cathode within the diode. Diodes can be used as voltage regulators, tuning devices in RF tuned circuits, frequency multiplying devices in RF circuits, mixers in RF circuits, switching applications, or can be used to make logic decisions in digital circuits. Diodes can be sub-divided into six major categories: General Purpose Diodes (PN junction diodes) PIN Diodes Schottky Barrier Diodes Step-recovery Diodes Varactor Diodes Zener Diodes Laser Diodes PIN Diodes are three-layer Semiconductor Diodes consisting of an intrinsic layer separating heavily doped P and N layers. The charge stored in the intrinsic layer in conjunction with other Diode parameters determines the resistance of the Diode at RF and microwave frequencies. This resistance typically ranges from kilo ohms to less than 1 ohm for a given diode. PIN Diodes are typically used as switches or attenuator elements. Step-recovery Diodes employ graded doping where the doping level of the Semi conductive materials is reduced as the P/N junction is approached. This produces an abrupt turn-off time by allowing a very fast release of stored charge when switching from forward to reverse bias. It also allows a rapid re-establishment of forward current when switching from reverse to forward bias. These Diodes are used in very high frequency (VHF) and fast switching applications. Varactor Diodes are P/N junction Diodes that are designed to act as a voltage-controlled capacitance when operated under reverse bias. One characteristic of P/N junctions is inherent capacitance. When the junction is reverse biased, increasing the applied voltage will cause the depletion region to widen, thus increasing the effective distance between the two â??platesâ?? of the capacitor and decreasing the effective capacitance. By adjusting the doping gradient and junction width, the capacitance range can be controlled and changes can be applied using reverse voltage. Our Products Automatic Voltage Regulator (AVR) Automatic Transfer Switch (ATS) Power Diodes (Stud/Flat Type) Power Diodes (Capsule Type) Phase Control Thyristors (Stud/Flat Type) Phase Control Thyristors (Capsule Type) Inverter Grade Thyristors (Capsule Type) Power Modules Bridge Rectifier Modules Three Thyristor Welding Modules Bridge Rectifiers Moulded Rectifiers For Generators Mono Block Bridge Rectifiers (Single Phase) Mono Block Bridge Rectifiers (Three Phase) Welding Bridge Rectifiers Field Failure Relay (FFR) Generator Diodes