The Samsung M386A8K40CM2-CVF is a 64GB DDR4 LRDIMM (Load-Reduced Dual In-Line
Memory Module) designed for server and high-performance computing applications.
** Brand:: Samsung
** Capacity:: 64 GB
** MPN:: M386A8K40CM2-CVF
** Model:: M386A8K40CM2-CVF
** Speed:: 2933 MHz
** Type:: DDR4
** Quantity available
The Samsung M386A8K40CM2-CVF is a 64GB DDR4 LRDIMM (Load-Reduced Dual In-Line Memory Module) designed for server and high-performance computing applications. ** Brand:: Samsung ** Capacity:: 64 GB ** MPN:: M386A8K40CM2-CVF ** Model:: M386A8K40CM2-CVF ** Speed:: 2933 MHz ** Type:: DDR4 ** Quantity available
Supplier: Laptops, desktops, computer pcs, printers, scanners, ups, led monitors, cisco networking products, storage and solutions, processors and memories, copier machines, cctv's, ubiquiti, perfumes, thermal rolls, a4 papers, stationery, perfume/ body spray
We deal with DDR1, DDR2, DDR3 rams with all speeds. Comes with OEM packing.
Feature: Capacity: 2 GB DDR3 RAM DDR Memory Type : DDR3 No. of Pins: 240 Pin Module Type: LONG DIMM Function: Non ECC Memory Warranty: 5years Retail packing or bulk packing or single packing
Memory ram Memory ram ddr2, adapter notebook, mp3, mp4
Supplier: Durable industrial equipment with main business covering industrial computers, embedded computers, displays & monitors, servers, etc.
Services: Manufacturing
Gold RAM memory scrap from motherboards selling 2000kg on ongoing monthly basis
343057-B21 4GB(2x2GB) REG PC2-3200 DDR2 Mem.
Feature: Capacity: 2gb ddr2 ram Ddr memory type: ddr2 No. Of pins: 240 pin long dimm Module type: long dimm Function: non ecc memory Chip: hynix. Elp. Micron. Samgsung. Infineon for ett chip Detail description: * ddrii 533/667/800 mhz * 240-pin socket type dual in line memory module (dimm) * 1.8v power supply * data rate: 533/667/800mbps (max.) * 1.8vpower supply for ddr ii products * double-data-rate architecture, two data transfers per clock cycle * bi-directional, differential data strobe (dqs) is transmitted/received with data, to be used in capturing data at the receiver * four internal banks for concurrent operation (component) * data mask(dm) for write data *auto precharge option for each burst access * programmable burst length: 2, 4, 8 * programmable/cas latency (cl): 3 * programmable output driver strength: normal/weak * refresh cycles: (8192 refresh cycles/64ms) * 2 variations of refresh * auto refresh self refresh. 10cm*3cm*0.5mm
