SG01XL-5 Broadband SiC based UV photodiode A = 7,6 mm2 Properties of the SG01XL-5 UV Photodiode * Broadband UVA+UVB+UVC, PTB reported high chip stability * Active Area A = 7.6 mm2 * TO5 hermetically sealed metal housing, short cap, 1 isolated pin and 1 case pin * 10µW/cm2 peak radiation results a current of approx. 99 nA SG01XL-5 UV Photodiode Specifications Typical Responsivity at Peak Wavelength: 0.130/AW Wavelength of max. Spectral Responsivity: 280nm Responsivity Range: 221 - 358nm Active Area: 7.6mm2 Dark Current (1V reverse bias): 25.3fA Capacitance: 1900pF Short Circuit (10µW/cm2 at peak): 99nA Temperature Coefficient: < 0.1%/K Operating Temperature: -55 ~ +170°C Storage Temperature: -55 ~ +170°C Soldering Temperature (3s): 260°C Reverse Voltage: 20V