SG01M-18S Broadband SiC based UV photodiode A = 0.20 mm2 Properties of the SG01M-18S UV Photodiode * Broadband UVA+UVB+UVC, PTB reported high chip stability * Active Area A = 0.20 mm2 * TO18 hermetically sealed metal housing, short cap, 1 isolated pin and 1 case pin * 10mW/cm2 peak radiation results a current of approx. 2600 nA SG01M-18S UV Photodiode Specifications Typical Responsivity at Peak Wavelength: 0.130/AW Wavelength of max. Spectral Responsivity: 280nm Responsivity Range: 221 - 358nm Active Area: 0.20mm2 Dark Current (1V reverse bias): 0.7fA Capacitance: 50pF Short Circuit (10mW/cm2 at peak): 2600nA Temperature Coefficient: < 0.1%/K Operating Temperature: -55 ~ +170°C Storage Temperature: -55 ~ +170°C Soldering Temperature (3s): 260°C Reverse Voltage: 20V