Aluminum Nitride (AlN) ceramics and components,High thermal conductivity (theoretic value 280W/m.K),high electric resistance,low coefficient of heat expansion(4.5X10-6) good march with Si(3.5~410-6) and GaAs(610-6),Excellent electrical properties(Dielectric constant, dielectric loss, bulk resistivity, dielectric strength). features an extremely interesting combination of very high thermal conductivity and excellent electrical insulation properties. This makes aluminum nitride predestined for use in power and microelectronics applications. For example, it is used as a circuit carrier(substrate) in semiconductors or as a heat-sink in LED lighting technology or high-power electronics and renewable energy. AlN ceramic has following properties 1) High thermal conductivity ( 280W/m.K) (2) High electrical insulation capacity (>1.1012©cm) (3) Low thermal expansion (coefficient of heat expansion)(4.5X10-6)Good with Si(3.5~410-6) and GaAs(610-6) (4)Excellent electricity properties(Dielectric constant, dielectric loss, bulk resistivity, dielectric strength). (5) Good mechanic properties (6) Excellent corrosion resistance (7) Good optical transmission property Application Power Module Duo to its high thermal conductivity, high electricity resistance, excellent electricity properties Dielectric constant, dielectric loss, bulk resistivity, dielectric strengthAlN ceramics are widely applied to large scale IC package, silicon controlled rectifier,high speed conversion module,audio frequency and microwave power amplifier, photo-electron IC module, IGBT module, etc. LED Package AlN ceramics will replace traditional materials for high power LED substrates, becoming a preferred material for substrate. High Brightness LED (HBLED): UVLED (UVA, UVC): RF/Microwave communication Automotive Electronics Image Sensing