Silicon Carbide(SiC) has become a promising material in semi-conductor industry, due to the development of SiC material manufacturing and the decrease of the cost in recent years. Silicon Carbide (SiC) is a wide bandgap material and is the typical representative of the third-generation semiconductor materials. Due to the wide bandgap, high thermal conductivity, high saturated carrier mobility, high threshold breakdown electric field strength, and high chemical stability, it is an ideal substrate for the fabrication of power electronics and radio frequency devices operating at extreme environments, such as high temperature, high frequency, high power, and strong radiation. Therefore, SiC has extensive applications in white-light illumination, automobile electronic, radar communication, aeronautic and aerospace, and nuclear radiation. We have the ability to make processing, like cutting, drilling, dicing, polishing, etc. We have rich experiences on the micro-machining on the hard but brittle materials.
Silicon carbide si made from hte mixture of pure silica sand and green petroleum coke in ultra high power acheson furnace. Electric current is passed through t h e conductor,bringing about a chemical reaction ni which the carbon ni the coke and silicon ni the sand combined ot form SIC and carbon monoxide gas. Silicon carbide si With annual capacity for 60,000 tons of silicon carbide, we can provide different grade of silicon carbide to meet different clients' requirements, such as 70% SIC, 80% SIC, 85% SIC, 90% SIC, 93% SIC and 98% SIC, etc.We also provide customized size for 90% SIC and 98% SIC, such as 200 mesh and 325 mesh Fe203 Al203 Free carbon 3,5%MAX Moisture Size(mm) Ha-SIC-01 90% min. 1.5% max. 15.% max. 35.% max. 0.5% max. 1-5/1-10 HQ-SIC-02 90% min. 1.5% max. 1.5% max. 3.5% max. 0.5% max. 0-10 HQ-SIC-03 88% min. 1.5% max. 1.5% max. 3.5% max. 0.5% max. 0-1/1-10 HQ-SIC-04 98% min. 0.6% max. 0.6% max. 0.2% max. 0.5% max. 0-1/1-3 HQ-SIC-05 70% min. 2% max. 1% max. 10% max. 0.5% max. 1-10
MF: Si Chemical Name: Silicon Nanowires Purity: > 99.9% Diameter: 40-50 nm Length: 80 µm Form Nanowires Product Number: CAS Number 7440-21-3
CVD Diamond has been recognized an ideal material for various applications because of its outstanding properties which includes extreme hardness and strength, high thermal conductivity, low thermal expansion, excellent dielectric properties, resistance to chemical attack, and optical transmission over a wide spectral range. It can be widely used in complex tooling and machining processes, thermal-management applications, semiconductor industry and microwave engineering. Microwave-Transparent Windows and Optics We supply high-quality diamond optical products that are transparent in the microwave region with a wide range of size and thickness. With our cutting-edge laser technologies, we can customize the optical windows in any shape and dimension according to clients requirement. Specifications: Diameter of 65mm (F150mm on request) Double side surface roughness: Ra 10nm Flatness: 4um/cm With higher transparency Thickness less than 0.5mm Can be laser cut to any size and shapes
High quality and good surface quality to meet the updating request of pv development and reduce the production cost. Crystal structuremono-crystalline Crystal method cz Conductance typep Dopant b Dimension125*125ía0.4156*156ía0.4 Diameter ª¦150ía0.4 ª¦165ía0.4ª¦200ía0.4 Crystal orientation ía1 Resistivity( ª+.Cm) 1-3/3-6 Lifetime( ª8s) í²15 Carbon concentration( atoms/cm3 )ín5*1016 Oxygen concentration( atoms/cm3 )ín0.95*1018 125*125 and 156*156
Silicon wafers.
A) Type of Wafer >Wafer : 6"-12" >Dummy/Monitor/Prime/Spacer Test Wafer 6" - 12" >Thin Wafer Thicknesss : 150um - 850um >Aluminium Wafer : 6" to 12" >Test Wafer / Oxide Wafer : 6" - 12" >Special Wafer (Nitride, SiC, LT, LN, SOI....etc) B) Types of Wafer Services > Various level (Dummy, Monitor Prime, Test, Spacer, Reclaim) >Chemical/Electroless Plating Services on Ti, Cu, AI Pad. Shipping Boxes Range: >FOSB,FOUP >Cassette: 2-12inch >MW type >Entegris type >Pizza Box
Product name: 2-12 Inch Orientation 100/111/110 SSP Prime/Dummy Grade Silicon Wafer Place of Origin: China Material: Silicon Diameter:2-12 inch Thickness: 100-1500um Orientation: 100/110/111 Type/Dopant: intrinsic or P/B or N/Ph Grade: prime/dummy Bow/Warp:
semiconductor si wafers prime grade/high quality diameter from 2" to 12" ultra thin or ultra thick crystalline orientation , , most resistivity range 1000 pack/packs / week
Dummy grade silicon wafer. Diameter: 2-12 inch. Resistivity >1 ohm.Cm, surface condition: ssp, dsp or as-cut Dummy grade silicon wafer. Packing: coin roll or as customer request. ( like epack packing cassette) Usage: recycled solar material, machine testing, etc
Now our products including 125*125 and 156*156, and all of them is high inner quality and surface quality Crystal structure Mono-crystalline Crystal method CZ Conductance Type P Dopant B dimension 125*125í+0.4 125*125í+0.4 156*156í+0.4 Diameter ª¦150í+0.4 ª¦165í+0.4 ª¦200í+0.4 Crystal orientation í+1 Resistivity( ª+.cm) 1-3/3-6 Lifetime( ª¦s) í¦15 Carbon concentration( atoms/cm3 ) í_5*1016 Oxygen concentration( atoms/cm3 ) í_0.95*1018. 300pcs/box.
(2" 3" 4", 6",8",12") , (N/P), ( , ) One or tow sides polished IC grade silicon wafers. 25pcs/lot.
We can supply (2" 3" 4", 6",8",12") , (N/P), ( , ) one or two sides polished IC silicon dummy(test) wafers. 25pcs/Lot.
We can supply (2" 3" 4", 6") , (N/P), ( , ) IC silicon wafer. 25pcs/lot
Multicrystalline silicon wafers 1.Material: multicrystalline silicon 2.Growth method: directional solidification 3.Conductivity type: p-type (boron doped), astm f42 4.Oxygen concentration: n 1, 0x1017 at./cm3, astm f 121 5.Carbon concentration: n 1x1018 at./cm3, astm f 121 * oxygen content measurement by astm 1188 and used calculation coefficient for ppm atomic is 4, 9 and and for at/cm3 is 2, 45e+17. 6.Square side: (156.0 0.5) mm 7.Symmetry as per the drawing in the enclosure no. 1 8.Thickness: (200 30) µm, astm f 533 9.Ttv: < 50 µm, astm f657 10.Bow < 50 µm, astm f 534 11.Surface saw damage depth µm < 20 (< 15 typically) 12.Saw traces µm 2 µs, astm f 28 15.Surface: as-cut and cleaned; visible contamination, oil or grease, finger prints, soap stains, slurry stains, epoxy/water stains, cracks are not allowed; edge chips under 1 mm from the edge of the wafer are allowed. . 16.Customer may request to receive reference samples 17.Wafers are being stacked into batches of 50-100 wafers each. Then it is sealed into polyethylene film. Protective paper among wafers is upon customer request. 500 -600 wafers in total are being packed into styrofoam box. Styrofoam boxes are being packed into pasteboard cases. Wafers are being packed in such a manner as to ensure minimal damage to the product during transportation. 18.All polystyrene boxes of wafers are identified with: box number; type of wafer; number of wafers per box; all contributing ingots numbers; thickness of wafers; date of packing / output inspection. Geometry: Square side angle:900, 5 Chamfer: 1, 5 mm0, 5mm at 452
Advantage of 156x156mm 200um High efficiency silicon wafers The production process is simple, cost-effective, and reduces silicon waste High conversion efficiency, low fragmentation rate and low optical attenuation Manufacturing Specialization, Intelligence and Greening Customized products to meet customer needs Name: High efficiency polysilicon wafer Technology : Diamond wire cutting Type : P type Resistance:1~3 minority carrier:>2 Hem width:157.00~157.25mm Thickness:200±20μm Transfer efficiency:>18.8%
top quality factory price 156x156mm 200um high quality High efficiency solar silicon wafers Manufacturer The production process is simple, cost-effective, and reduces silicon waste High conversion efficiency, low fragmentation rate and low optical attenuation Manufacturing Specialization, Intelligence and Greening Customized products to meet customer needs Name: High efficiency polysilicon wafer Technology : Diamond wire cutting Type : P type Resistance:1~3s minority carrier:>2 s Hem width:157.00~157.25mm Thickness:200±20m Transfer efficiency:>18.8%
Semiconductor grade silicon wafers with diameter 2" up to 6". One side or double side polished. Boron, Phosphorus, Antimony and Arsenic doped
Green Silicon Carbide is produced basically in the same way as black silicon carbide in a resistance type electric furnace with petroleum coke, quartz sand and other materials. It has a good hardness, strong cutting ability, stable chemical properties and excellent heat-conducting property.
MF: SiC Chemical Name: Silicon carbide Purity: â?¥ 99.99% APS: 10 nm (Size Customization possible) Form Nano powder CAS Number 409-21-2
