UVA-only SiC based UV photodiode A = 0.06 mm Model Number: SG01SA18 1.Properties of the SG01SA18 UV photodiode * UVA-only sensitivity, PTB reported high chip stability * Active Area A = 0,06 mm2 * TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin * 10mW/cm2 peak radiation results a current of approx. 222 nA 2.About the material Silicon Carbide (SiC) SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV de-tectors. The SiC detectors can be permanently operated at up to 170'C (338'F). The temperature coefficient of signal (responsivity) is also low, < 0.1%/K. Because of the low noise (dark current in the fA range), very low UV radiation intensities can be measured reliably 3.Options SiC photodiodes are available with seven different active chip areas from 0.06 mm2 up to 36 mm2. Standard version is broadband UVA-UVB-UVC. Four filtered versions lead to a tighter sensitivity range. All photodiodes have a hermeti-cally sealed metal housing (TO type), either a 5.5 mm diameter TO18 housing or a 9.2 mm TO5 housing. Further op-tion is either a 2 pin header (1 isolated, 1 grounded) or a 3 pin header (2 isolated, 1 grounded).
Properties of the sg01d-a18 uv photodiode * uva-only sensitivity, ptb reported high chip stability * active area a = 0.50 mm2 * to18 hermetically sealed metal housing, 1 isolated pin and 1 case pin * 10µw/cm2 peak radiation results a current of approx. 1.85 na Spectral characteristic Typical responsivity at peak wavelength: 0.037/aw Wavelength of max. Spectral responsivity: 331nm Responsivity range: 309 - 367nm Active area: 0.50mm2 Dark current (1v reverse bias): 1.7fa Capacitance: 125pf Short circuit (10µw/cm2 at peak): 1.85na Temperature coefficient: < 0.1%/k Maximum rating Operating temperature: -55 - +170'c Storage temperature: -55 - +170'c Soldering temperature (3s): 260'c Reverse voltage: 20v
Protects against both UVA and UVB rays Very high protection factor (SPF50+) Innovative dosing pump for exact dosing (contains up to 200 doses) Contains a broad spectrum photostable filters (6 filters) Contains moisturizing properties so that it cares for the skin Suitable for even the most sensitive skin Absorbs quickly, without leaving a white haze Recommended by dermatologists Actinica Lotion SPF50+ is a medical device for the prevention of certain forms of non-melanoma skin cancer (actinic keratosis) and photodermatosis (sun allergy). The lotion has been specially developed for people who have a high risk of developing skin cancer as a result of exposure to UV. Actinica Lotion SPF50+ has a very high protection factor and offers very high UVA and UVB protection for skin previously damaged by UV radiation. Actinica Lotion SPF50+ has a handy dosing pump, which dispenses a constant amount of lotion. This ensures that you get the right amount per body part.
Protects your skin from UV rays. The large bottle of sun milk with a high protection factor for sensitive skin To fight against the harmful effects of UV radiation and to protect the valuable genetic capital of the skin, Laboratoires Vichy have integrated in the Sun Milk a filter system that is photostable with a high UVA -UVB spectrum based on Mexoryl. Skin is protected against sunburn and skin aging. Enriched with soothing, strengthening and regenerating Vichy Thermal Spring Water. Its texture is enriched with hyaluronic acid for easy application, without whitening or greasy skin. The freshness of this Care provides a pleasant feeling every time it is applied. The hypoallergenic formula is dermatologically tested on sensitive skin. A formula without fragrances . The 300 ml size is very suitable for families. Indications: For light-skinned men and women who are looking for high sun protection for body and face
Concentrator lens sic based uv photodiode sensor sg01d-5lens Avirtual = 11, 0 mm2 Properties of the sg01d–5lens uv photodiode • broadband uva+uvb+uvc, ptb reported high chip stability, for flame detection • radiation sensitive area a = 11, 0 mm2 • to5 hermetically sealed metal housing with concentrator lens, 1 isolated pin and 1 case pin • 10µw/cm2 peak radiation results a current of approx. 350 na About the material silicon carbide (sic) Sic provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make sic the best available material for visible blind semiconductor uv detectors. The sic detectors can be permanently operated at up to 170°c (338°f). The temperature coefficient of signal responsivity) is also low, < 0, 1%/k. Because of the low noise (dark current in the fa range), very low uv radiation intensities can be measured reliably. Please note that this device needs an appropriate amplifier (see typical circuit on page 3). Options Sic photodiodes are available with seven different active chip areas from 0, 06 mm2 up to 36 mm2. Standard versionis broadband uva-uvb-uvc. Four filtered versions lead to a tighter sensitivity range. All photodiodes have a hermetically sealed metal housing (to type), either a 5, 5 mm diameter to18 housing or a 9, 2 mm to5 housing. Further option is either a 2 pin header (1 isolated, 1 grounded) or a 3 pin header (2 isolated, 1 grounded).
INCI Name: BIS-ETHYLHEXYLOXYPHENOL METHOXYPHENYL TRIAZINE Molecular Formula: C38H49N3O5 Molecular Weight: 627.81 Appearance: Light yellow powder Purity: 98% CAS NO.: 187393-00-6 EINECS No.: 223-346-6 Application: cosmetics and skin care products Supplier: ZHENYIBIO Bis-ethylhexyloxyphenol methoxyphenyl triazine is an oil-soluble organic compound that is added to sunscreen to absorb ultraviolet rays. It is a wide-area (broadband) purple Chemicalbook external line absorber with extremely high light stability and can absorb UVB and even UVA. It has two absorption peaks, located at wavelengths of 310 and 340 nanometers. Bis-Ethylhexyloxyphenol Methoxyphenyl Triazine is a broad-spectrum UV absorber that absorbs UVA and UVB and is added to various sunscreen products to absorb UV rays. The protection of UVA is comparable to that of Avobenzene. It has a large molecular weight and is not easily absorbed by the skin; it has strong stability and can also be used as a stabilizer for other chemical sunscreens; it has strong compatibility with other sunscreens.
SG01S-18S Broadband SiC based UV photodiode A = 0.06 mm2 Properties of the SG01S-18S UV Photodiode * Broadband UVA+UVB+UVC, PTB reported high chip stability * Active Area A = 0.06 mm2 * TO18 hermetically sealed metal housing, short cap, 1 isolated pin and 1 case pin *10mW/cm2 peak radiation results a current of approx. 780 nA SG01S-18S UV Photodiode SpecIfication Typical Responsivity at Peak Wavelength: 0.130/AW Wavelength of max. Spectral Responsivity: 280nm Responsivity Range: 221 - 358nm Active Area: 0.06 mm2 Dark Current (1V reverse bias): 0.2fA Capacitance: 15pF Short Circuit (10mW/cm2 at peak): 780nA Temperature Coefficient: < 0.1%/K Operating Temperature: -55 ~ +170'C Storage Temperature: -55 ~ +170'C Soldering Temperature (3s): 260'C Reverse Voltage: 20V
Sic uv photodiode sg01m-5lens Concentrator lens sic based uv photodiode avirtual = 11.0 mm2 Properties of the sg01m-5lens sic uv photodiode * broadband uva+uvb+uvc, ptb reported high chip stability, for very weak radiation * radiation sensitive area a = 11.0 mm2 * to5 hermetically sealed metal housing with concentrator lens, 1 isolated pin and 1 case pin * 10âµw/cm2 peak radiation results a current of approx. 140 na Specifications Typical responsivity at peak wavelength: 0.130/aw Wavelength of max. Spectral responsivity: 280 nm Responsivity range (s=0.1*smax): 221 - 358 nm Sensitive area (chip size = 0.20 mm2): 11.0 mm2 Dark current (1v reverse bias): 0.7 fa Capacitance: 50 pf Short circuit (10uw/cm2 at peak): 140 na Temperature coefficient: < 0.1 %/k Operating temperature: -55 - +170 'c Storage temperature: -55 - +170 'c Soldering temperature (3s): 260 'c Reverse voltage: 20 v
SG01L-5LENS Concentrator lens SiC based UV photodiode Avirtual = 55 mm2 Properties of the SG01L-5LENS UV Photodiode * Broadband UVA+UVB+UVC, PTB reported high chip stability, for flame detection * Radiation sensitive area A = 55 mm2 * TO5 hermetically sealed metal housing with concentrator lens, 1 isolated pin and 1 case pin * 10µW/cm2 peak radiation results a current of approx. 700 nA SG01L-5LENS UV Photodiod Specifications * Typical Responsivity at Peak Wavelength: 0.130/AW * Wavelength of max. Spectral Responsivity: 280nm Responsivity Range: 221 - 358nm * Sensitive Area (chip size = 0.20 mm2): 55mm2 * Dark Current (1V reverse bias): 3.5fA * Capacitance: 250pF * Short Circuit (10µW/cm2 at peak): 700nA * Temperature Coefficient: < 0.1%/K * Operating Temperature: -55 ~ +170'C * Storage Temperature: -55 ~ +170'C * Soldering Temperature (3s): 260'C * Reverse Voltage: 20V
UV Flame sensor is fire detect sensor which detecs ultraviolet rays of a flame instantly and output warning signal outside. By using emergency call equipment or adjusting the sensor connection, SKH-)$& can supervise multiple sensors at a long range.
Sg01l-5lens Concentrator lens sic based uv photodiode avirtual = 55 mm2 Properties of the sg01l-5lens uv photodiode Broadband uva+uvb+uvc, ptb reported high chip stability, for flame detection Radiation sensitive area a = 55 mm2 To5 hermetically sealed metal housing with concentrator lens, 1 isolated pin and 1 case pin 10âµw/cm2 peak radiation results a current of approx. 700 na Sg01l-5lens uv photodiod specifications Sensitive area: 55 mm2 Dark current: 3.5 fa Capacitance: 250 pf Responsivity range: 221 - 358 nm Operating temperature: -55 ~ +170â°c Storage temperature: -55 ~ +170â°c Soldering temperature (3s): 260â°c Reverse voltage: 20 v
SG01S-B18 UVB-only SiC based UV photodiode A = 0.06 mm2 Properties of the SG01S-B18 UV Photodiode * UVB-only sensitivity, PTB reported high chip stability * Active Area A = 0.06 mm2 * TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin * 10mW/cm2 peak radiation results a current of approx. 750 nA SG01S-B18 UV Photodiode Specifications Typical Responsivity at Peak Wavelength: 0.125/AW Wavelength of max. Spectral Responsivity: 280nm Responsivity Range: 231 - 309nm Active Area: 0.06mm2 Dark Current (1V reverse bias): 0.2fA Capacitance: 15pF Short Circuit: 750nA Temperature Coefficient: < 0.1%/K Operating Temperature: -55 ~ +170°C Storage Temperature: -55 ~ +170°C Soldering Temperature (3s): 260°C Reverse Voltage: 20V
SG01S-C18 UVC-only SiC based UV photodiode A = 0.06 mm2 Properties of the SG01S-C18 UV Photodiode * UVC-only sensitivity, compliant with DVGW W294, PTB reported high chip stability * Active Area A = 0.06 mm2 * TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin * 10mW/cm2 peak radiation results a current of approx. 720 nA SG01S-C18 UV Photodiode Specifications * Typical Responsivity at Peak Wavelength: 0,120/AW * Wavelength of max. Spectral Responsivity: 275nm * Responsivity Range: 225 - 287nm * Active Area: 0.06mm2 * Dark Current (1V reverse bias): 0.2fA * Capacitance: 15pF * Short Circuit (10mW/cm2 at peak): 720nA * Temperature Coefficient: < 0.1%/K * Operating Temperature: -55 ~ +170°C * Storage Temperature: -55 ~ +170°C * Soldering Temperature (3s): 260°C
SG01M-B18 UVB-only SiC based UV photodiode A = 0.20 mm2 Properties of the SG01M-B18 UV Photodiode * UVB-only sensitivity, PTB reported high chip stability * Active Area A = 0.20 mm2 * TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin * 10mW/cm2 peak radiation results a current of approx. 2500 nA SG01M-B18 UV Photodiode Specifications Typical Responsivity at Peak Wavelength: 0.125/AW Wavelength of max. Spectral Responsivity: 280nm Responsivity Range: 231 - 309nm Active Area: 0.20mm2 Dark Current (1V reverse bias): 0.7fA Capacitance: 50pF Short Circuit (10mW/cm2 at peak) : 2500nA Temperature Coefficient: < 0.1%/K Operating Temperature: -55 ~ +170°C Storage Temperature: -55 ~ +170°C Soldering Temperature (3s): 260°C Reverse Voltage: 20V
SG01M-B5 UVB-only SiC based UV photodiode A = 0.20 mm2 Properties of the SG01M-B5 UV Photodiode * UVB-only sensitivity, PTB reported high chip stability * Active Area A = 0.20 mm2 * TO5 hermetically sealed metal housing, 1 isolated pin and 1 case pin * 10mW/cm2 peak radiation results a current of approx. 2500 nA SG01M-B5 UV Photodiode Specifications Typical Responsivity at Peak Wavelength: 0.125/AW Wavelength of max. Spectral Responsivity: 280nm Responsivity Range: 231 to 309nm Active Area: 0.20mm2 Dark Current (1V reverse bias): 0.7fA Capacitance: 50pF Short Circuit (10mW/cm2 at peak): 2500nA Temperature Coefficient: < 0.1%/K Operating Temperature: -55 ~ +170'C Storage Temperature: -55 ~ +170'C Soldering Temperature (3s): 260'C Reverse Voltage: 20V
Avobenzone is an oil-soluble ingredient used in sunscreen products to absorb the full spectrum of UVA rays.Avobenzone was patented in 1973 and was approved in the EU in 1978. Its use is approved worldwide. Pure avobenzone is a whitish to yellowish crystalline powder with a weak odor, dissolving in isopropanol, dimethyl sulfoxide, decyl oleate, capric acid/caprylic, triglycerides and other oils. It is not soluble in water. Avobenzone absorbs both UV-(380-315 nm that is associated with long term skin damage) and UV-B (315-280 nm that causes sunburn) rays. Avobenzone is known as one of the most effective sunscreen ingredients.
1. Uv sensor guva-c22sd features Gallium nitride based material Schottky-type photodiode Photovoltaic mode operation Good visible blindness High responsivity & low dark current 2. Uv sensor guva-c22sd applications Uv index monitoring Uv-a lamp monitoring 3. Uv sensor guva-c22sd absolute maximum ratings Storage temperature: -40~90'c Operating temperature: -30~85'c Reverse voltage: 5v Forward current: 1ma Optical source power range: 0.1âµ~100m w/cm2 Soldering temperature: 260'c 4. Uv sensor guva-c22sd characteristics (at 25'c) Dark current: 1na max Temperature coefficient: 0.08%/'c Responsivity: 0.14a/w Spectral detection range: 240~370nm Active area: 0.076mm2
UV Sensor "UV-Arc" water proof UV sensor with G3/4" thread for pantograph arc detection Properties of Waterproof UV Sensor UV-Arc The UV-Arc is a waterproof sensor with a male threaded body (G3/4") to be used on trains to measure intensity and length of pantograph arcs according to EN 50317. This indicates the quality of the contact between a pantograph and the contact wire and allow a location of defects at the wire within a rail network. The UV-Arc sensor is configured for this special application. It contains a very sensitive photodiode with an additional fi lter to suppress solar UVB sensitivity. The time constant is adjusted to the typical arc lengths and the metal housing provides high EMC safety. UV-Arc Waterproof UV Sensor Specifications * Temperature Coefficient (30 to 65'C): 0.05 to 0.075%/K * Operating Temperature: -20 to +80'C * Storage Temperature: -40 to +80'C * Humidity: < 80%, non condensing * Spectral Sensitivity: UVC+ * Measuring Range: up to 400 µW/cm2 * Signal Output: 0 to 5 V or 4 to 20 mA
UV Sensor "UV-Arc" water proof UV sensor with G3/4" thread for pantograph arc detection Properties of Waterproof UV Sensor UV-Arc The UV-Arc is a waterproof sensor with a male threaded body (G3/4") to be used on trains to measure intensity and length of pantograph arcs according to EN 50317. This indicates the quality of the contact between a pantograph and the contact wire and allow a location of defects at the wire within a rail network. The UV-Arc sensor is configured for this special application. It contains a very sensitive photodiode with an additional filter to suppress solar UVB sensitivity. The time constant is adjusted to the typical arc lengths and the metal housing provides high EMC safety. UV-Arc Waterproof UV Sensor Specifications * Temperature Coefficient (30 to 65'C): 0.05 to 0.075%/K * Operating Temperature: -20 to +80'C * Storage Temperature: -40 to +80'C * Humidity: < 80%, non condensing * Spectral Sensitivity: UVC+ * Measuring Range: up to 400 W/cm2 * Signal Output: 0 to 5 V or 4 to 20 mA
1.Features Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation Good Visible Blindness High Responsivity & Low Dark Current 2.Applications UV Index Monitoring UV-A Lamp Monitoring 3. Absolute Maximum Ratings Storage Temperature: -40~90'C Operating Temperature: -30~85'C Reverse Voltage: 5V Forward Current: 1mA Optical Source Power Range: 0.1u~100m W/cm2 Soldering Temperature: 260'C 4. Characteristics (at 25'C) Dark Current: 1nA Temperature Coefficient: 0.08%/'C Responsivity: 0.14A/W Spectral Detection Range: 240~370ã?? Active area: 0.076mm2
