Type Multi crystalline silicon wafer ( B grade) Size(mm) 156.6 (+0.0 to -0.5). P/N type P Do pant Boron Resistivity(ohmcm) 0.5 û 5.0 Carbon Content 5.0x1017 atoms per cm3 Oxygen Content 3.0x1017 atoms per cm3 Life Time > 1.5 microsecond. T T V less than or equal 50 microm. Thickness 200 microm(+/- 30 microm) Production(Casting) method EMC Diffusion length greater than or equal to 50 micrometer Conner angle(degree) 90.0 +/- 0.3 Beveled edge width 0.5 - 2 mm Appearance Chip ( Width 0.8 mm, less than or equal 4 points.
