Silicon carbide(sic) wafer
Description:
A wide energy bandgap, high thermal conductivity, high saturated electron drift velocities, and high break-down electric field make silicon carbide(sic) a candidate of choice for high-temperature, high-speed, high frequency, and high-power applications. Sic based devices are highly expected for the spaceraft, space probe, oil exploration, optical storage, display, and power management and distributions
Application:
Luminescence of solid
Microwave communication
Fiber-optic communication
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Individual vacuum package
Supplier: Electronic connector: terminal, housing, wafer, pin header
Supplier: Silicon wafers for semiconductors, coin roll, reclaimed wafers, test wafers, silicon ring, silicon discs, broken wafers
Services: Trading
Supplier: Silicone Rubber Related Products Tubes, Sheets, Caps Form And Thermal Conductive Pads, Conductive Keypads, Zebra Connectors And Membrane Switches.
Supplier: Saw filter, saw resonator, ltcc filter, balun, dielectric, duplexer, wifi5/6 fem, divfem ,lithium niobate wafer, lithium tantalate wafer, quartz wafer,sic mosfet, sic sbd, igbt, isolator, circulator
Supplier: Semi conductor transistors, diode, thyristor, solid state relay, mosfet, integrated circuit, semiconductor equipments, semiconductor parts;, schottky diode, zener diode, swiching transistor, small signal transistor, mosfet, darlington diode, semiconductor wafer, semiconductor die, semiconductor chip
The series of pressure sensor is a small size piezo-resistive pressure sensor. The die size is 1x1mm2. When the input voltage is 3vdc the sensor produces mv dc output voltage which is direct proportion of the input pressure. Pressure sensor is the absolute pressure sensor, and we can also offer the differential pressure mode. All the products can be customized according to your requirement. Features Solid, mems technique, high reliability Low cost, tiny size,-1700kpa Nonlinearity: < 0.20%fso Silicon/silicon bonding wafer, high stability Application For high resolution absolute sensor systems Engine control Tire gauge Barometers, altimeters, variometers, sphygmomanometer Min Typ Max Unit Remarks Excitation voltage 5.0 V Excitation current 1 Ma Span Fs rang 100kpa 50 70 90 Mv 1 150kpa, 200kpa, 350kpa, 700kpa, 1000kpa 80 120 180 Mv 1.7mpa 100 150 200 Mv Offset -35 35 Mv 2 Tc span -24 -19 -15.5 %fs/100 3 Tc offset -7 +7 %fs/100 3 Tcr +18 +22 +33 % /100 3 Linearity -0.45 -0.15 +0.45 %fs 4 Bridge impedance 5 K|¸ Proof pressure 2x Fixed fs Burst pressure 4x Fixed fs Operating temperature -40 +125 Storage temperature -55 +150 Notes: 1. Measured at 5v constant voltage excitation. 2. The offset is ¡¡§¡è50mv for 100kpa, 150kpa 3. Measured from 0 to 60 c 4. Defined as best straight line. Full scale pressure Kpa Bar Mbar Psi Atm Mmhg Mmh2o Kg/cm 2 , 700 7 700 102 6.9 5250 71451 7.1 1700 17 1700 247 16.8 12754 173524 17.3 Model Pressure ranges Kpa Psa 100 010 200 Psa 070 020 350 035 700 070 1000 Pressure range Pressure type 100 1700 170 3500 350 Standard packaging
Silicon Carbide Heating Element General Description Silicon carbide heating element is a kind of non-metal high temperature electric heating element. It is made of selected high quality green silicon carbide as main material, which is made into blank, siliconization under high temperature and recrystallized. It is the most popular type of economical heating element capable of operating under hot and rigorous environments. Silicon Carbide Heating Element Features 1. withstands as high as 1600�°C 2. high strength and excellent shock resistance 3. heat source is free of noise and air pollution 4. anti-oxidization, anti- corrosion 5. easy to installation and maintenance Applications of Silicon Carbide Heating Element There are ED, U, W, H, Gun, Single Spiral, Double Spirals, Dumbbel, Door-like types and etc. which are widely used in various high temperature electric furnaces in air, vacuum and other protection gas environments and other electric heating devices, such as industries of magnet, ceramics, powder metallurgy, glass and machinery, etc. Silicon Carbide Heating Elements Complete Specifications 0 Silicon Carbide Heating Elements Complete Specifications 1 Normally the following should be given when describing any type of SiC heating elements: Type: ED, U, W, SC, SCR, DB,G, H, or DM Outside Diameter (OD) : mm Length of Hot Zone (HZ) :mm Length of Cold Zone (CZ) :mm Length of Overall(OL):mm Center Distance (A) :mm Resistance at 105050 Physical property of SIC heating element specific gravity 2628gcm bend strength 300kg hardness 9MOHS tensile strength 150kgcm porosity rate
Supplier: Semiconductor/fpd materials and solutions, quartz wares, chemicals, gold sputtering targets, sic wafers, teflon valves
Supplier: Ferro silicon, silicon carbide, silicon calcium, casi cored wire, rare earth fesi
Buyer: Chromite ores
