Description
RD30HVF1 is a mos fet type transistor specifically
Designed for vhf rf power amplifiers applications.
Features
High power gain:
Pout>30W, GP>14.7DB @VDD=12.5V, F=175MHZ
High efficiency: 60%typ.
Application
For output stage of high power amplifiers in vhf band
Mobile radio sets.
Rohs compliant
Rd30hvf1-101 is a rohs compliant products.
Rohs compliance is indicate by the letter after
The lot marking.
Tray.