Cluster System:
1. OLED Panel and material development system
2. High-efficiency/high-life panel manufacturing system through evaporation/encapsulation process in the ultra-high vacuum area
3. Application of cleaning and out-gassing removal methods to secure high-efficiency/high-life
Inline System: 1.A system with excellent productivity as an inline type in which the deposition process is performed while the substrate moves. 2. Optimized for OLED lighting panel production
R&D System 1. Suitable system for OLED Panel R&D 2. Organic and inorganic deposition and encapsulation process at an efficient investment cost
ITEM DESCRIPTION Consisting of Evaporation,Sputter,Parylene,Glove Box,Loadlock Tact time 20~80 min Depends on the number of mask Loading Capacity Glass 1 Sheet, Mask 4 Sheet Transfer Methode Vacuum Robot Plasma Treatment Optional Evaporation Source for Organic (5ea) 10cc for host, 4cc for dopant Evaporation Source for metal (2ea) Thermal Source, E-Beam is optional Deposition Uniformity Organic, Metal, Sputter less than ±3% Max. deposition rate Organic 5A/sec, metal 10A/sec Rate Accuracy Organic ±5%, Metal ±7% Thickness reliability Organic & Metal ±5% glass to glass Conductive Oxide Low Damage Sputtering (FTS or General Sputter) Doping ratio less than 1% at 1A/sec of host.
HPMA is a low molecular weight polymeride, with average molecular weight 400-800. No toxicity, soluble in water, high chemical and thermal stability, decomposed temperature above 330�ºC. HPMA has obvious threshold effect under high temperature (350�ºC) and high pH(8.3)level, suitable to be used in alkaline water system or built with agents. It has good scale inhibition against carbonate and phosphate scales under temperature 300�ºC with effective time as long as 100 hours. Due to its good scale inhibition and high temperature tolerance properties, HPMA is widely used in desalination plant of flash vaporization equipment, low pressure boiler, steam locomotive, crude oil evaporation, petroleum pipeline, and industrial circulating cool water systems. In addition, HPMA has good corrosion inhibition effect when used together with zinc salt. HPMA can also used as additives for cement.
Cluster Sputter: 1. A system suitable for automated production lines or development and research sites 2. Highly integrated technology and mechanism
It is the equipment to provide the electron beam vertically to the evaporate surface using the electron beam gun, and it is used in the process of optical multi-layer films This is the process micro electro mechanical system (MEMS) known as the electron beam evaporation process Physical Vapor Deposition (PVD) The deposition process is used to open the data in the source and send those data to the basal board and also to form thin films or coating. Because this is inexpensive regarding the material cost and exhibits rather low process risk, PVD process is the chemical vapor deposition generally used for metal eposition. The process applying the deposition of thin films conducts modification with various kinds of surfaces wanted by the industry in order to provide data to the electronic industry for semicon doctor growth, reflection needing properties to the aerospace, environment to the permeability optics, surface protection from the board corrosion, and also thermal and chemical barrier coating.
OLED Mobility(TOF) Measurement System(CTS-102) Characteristics & Strengths -Automated TOF Data Measurement System -Owing to the application of ND-Yag Laser, it could be Semi-Permanently used without Consumables. -With the improvement of noise characteristic, it is possible to measure the TOF Characteristic Signal in Low-Voltage Field Bias. -Convenient Measurement of GUI & Automated Sequence Function -Zero-Field Mobility Analysis Function Applications :Measurement and Analysis of Electronic Material Charge Mobility Specification : Contact separately Key components :Laser, oscilloscope, Source meter, Optical system, Element fixing device Measurement / Analysis software, Facility operation PC Temperature control device (option)
ITEM DESCRIPTION Substrate Size 156mm² solar wafer, 4pcs Deposition Direction Downward Plasma Source RF & VHF Power Supply Process Gas Any of Requested Gas (Solar : Si3N4,SiO2,Al2O3) Process Temperature ~ 700 C Uniformity ±3% Heating Uniformity ±3% Full Automation Control, Load Lock System
ITEM DESCRIPTION Substrate Size ~ 6inch Deposition Direction Downward Process Gas Any of Requested Gas Process Temperature ~ 1000 C on Substrate Uniformity ±3% Heating Uniformity ±3% Full Automation Control, Load Lock System
