Indium phosphide (inp) wafer
Description:
Inp is an important semiconductor for both electronic and photonic device due to its good thermal conductivity, high radiation resistance and high electron saturation mobility. Si-inp single crystals are now widely used for the manufacture of high- frequency, high-speed, high-power microwave devices and optoelectronic integrated circuits which are indispensable for wireless technology, guidance/navigation system, satellite communications and high-speed computers.
Individual vacuum package
Silicon carbide(sic) wafer
Description:
A wide energy bandgap, high thermal conductivity, high saturated electron drift velocities, and high break-down electric field make silicon carbide(sic) a candidate of choice for high-temperature, high-speed, high frequency, and high-power applications. Sic based devices are highly expected for the spaceraft, space probe, oil exploration, optical storage, display, and power management and distributions
Application:
Luminescence of solid
Microwave communication
Fiber-optic communication
Navigation
Individual vacuum package
Gasb is an important iii-v semiconductor for manufacturing midwavelength infrared type ii esuperlattice lasers and detectors. The gasb based infrared lasers and detectors have been widely used to night vision, communications meteorology, atmospheric monitoring, industrial flaw detection, the earth resources exploration, temperature etc.
Individual vacuum package
