Silicon core furnace is a kind of equipment which works on the condition of being aerated (to protect gas), and then silicon growth from silicon polycrystalline rods.
The main technical parameters and components of silicon growth furnace
Production capacity and external conditionsThe technical parameters of furnace body
1. Production capacity:4piece/batch;6piece/batch1, max stroke of upper shaft:2300mm
2. Specification of raw material:(45-50)500mm2, effective stroke of upper shaft:2300mm
3. Resistivity:<1003, max stroke of lower shaft:550mm
Specification of product:(7-10)2100mm4, effective stroke of lower shaft: 530mm
5. Voltage of heating power supply:3-phase 380v5, rapid rise/fall of upper shaft:1300mm/min 700mm/min
6. High frequency induction heating power supply:power 40/60kw6, slow rise/fall of upper shaft:0-60mm/min
7. Vacuum degree for blow-in¡ü3pa7, rotating speed of lower shaft: 0-30rpm
8. Slow rise/fall of lower shaft:0.02-10mm/min
9. Rapid rise/fall of lower shaft:about 150mm/min about 75mm/min
10. Radial pulsation of lower shaft:0.1mm
11. Axial pulsation of lower shaft:0.05mm
12. Axiality of upper / lower shaft:1.5mm.
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Eaf is a heat charged material by means of an electric arc, its applications are very wide from production of ferro-alloys to other non-ferrous alloys, and production of phosphorus. Electric arc furnace range in size from a small units of approximately one capacity (used in for producing products) up to about 400 ton units used for secondary, and also used in research laboratories and dentistry, which have a few capacity, only a small dozen grams.
Technical parameter:
Model Rated capacity Max. Capacity Shell inner diameter Electrode diameter Transformer capacity
TTMmMmKva
Eaf-5t51032003004000.
Keywords: furnace, induction furnace, arc furnace, eaf, smelting furnace, metallurgy machinery, industrial furnace, electrode arc furnace.
The if inductive melting furnace produced by our factory is used extensively in the fields of melting cast iron, stainless steel, copper, aluminum, gold, silver, special alloy and so on.
Equipment constitution
1. Furnace body
2. Hydraulic tilting device,
3. Operation table
4. Medium frequency power supply
5. Low voltage power cabinet
6. Capacitor bank
7. Water cooling cable
8. Crucible mould
9. Water tanks
10. Water temperature and pressure annunciator
Product feature:
1. High melting efficiency, acceptable and good energy-saving effect
2. Metal composition uniformity, temperature is easy to control.
3 .It's mainly used for melting, heating, insulation, and energy and cupola duplex operation, characterized by high melting efficiency, good operating environment, the operation process is simple.
4.The stove ambient temperature is low, safe and reliable. Using the most advanced sweep frequency zero-voltage soft startup circuit;
5.Has a number of protective measures, such as over current, over voltage , open-phase protection etc.
Ae-6000c-type flexible shaft crystal growth furnace is to melt silicon semiconductor materials by graphite resistance heater in an inert gas environment, using czochralski technique dislocation-free crystal growth equipment, it can produce high quality single crystal which for solar photovoltaic devices.
Main technical parameters:
Properties model ae-85 ae-95 ae-120
Diameter of growth tank (mm) 850 950 1200
Ingot diameter (inch) 6 - 8 8 - 10 8-16
Silica crucible size (inch) 18-20 22-24 24-28
Max charge amount (kg) 95 150 260
Max crystal length (mm) 2000 2000 2000
Seed pulling ratemm/hr 0-508 0-508 0-508
Seed jog speed (mm/min) 0-508 0-508 0-508
Seed rotation rate (rpm) 0-40 0-40 0-40
Crucible elevate rate (mm/hr) 0-128 0-128 0-128
Crucible jog speed (mm/min) 0-50.8 0-50.8 0-50.8
Crucible rotation rate (rpm) 0-20 0-20 0-20
Crucible travel stroke (mm) 400 420 480
Maximum weight for
Crucible support (kg) 165 230 450
Main line pump rate (sl/sec) 70 70 150
Auxiliary pump rate (sl/sec) 8 8 8
Ultimate pressure (pa) less than 4 less than 4 less than 4
Permissible leak rate (pa/hr) less than 6 less than 6 less than 6
Gas flow control range (sl/min) 4-200 4-200 4-200
Working pressure range (pa) 1500-5000 1500-5000 1500-5000
Ac power input (3 phase, 380v) 140 kw 200 kw 250 kw
Number of heating elements 1 2 2
Magnetic coil optional optional optional.
AE-270/450 polycrystalline silicon ingot furnace adopts various kinds of new technologies, and with the advantages of a larger loading and a higher productivity.
The adoption of special ceramic fiber and the double safety protection design of graphite hard felt will guarantee that the emergency measures for silicon leakage can be started promptly with the automatic induction system of silicon leakage. The excellent safety performance of this furnace can reduce the potential accidents greatly.
The heating system with high performance can guarantee the uniformity and consistency of silicon during the crystallization process.
The operation process adopts PLC control, high-speed microprocessor testing and processing elements, dynamic detecting and high-speed response, and it has realized the automatic control and data exchange in the whole process. Therefore, this furnace takes the advantages of high efficiency, high stability, high reliability and good anti-jamming. What¡¯s more, its control system is equipped with single-phase UPS devices, which can reduce the loss coursed by instant power interruptions.
Polycrystalline silicon ingot furnace is an important production equipment in the field that generates electricity though solar photovoltaic, it is also a kind of polycrystalline silicon ingot casting equipment which is developed to meet the needs of solar battery market.
Putting the materials such as polycrystalline silicon pieces, end-wastage, crucible base material and various kinds of mono-crystal waste pieces into the quartz crucible of the furnace, and after the relevant process of melting, re-directed crystallization and annealing, it can cast the preliminary raw material of solar battery, what we called polycrystalline silicon ingots.
Technical parameters
specifications AE500 AE800
Equipment size mm3 L3700 W4900 H5080 L3700 W4900 H5080
Silicon ingot size mm3 420kg:840 840 270480kg:840 840 300 650kg:1000 1000 280 700kg:1000 1000 300
Silicon ingot weight kg 420-480 650-700
Production cycle hr 52-54 60-62
Power distribution AC 380 10% V,200kVA,three-phase five-wire system,50Hz AC 38010% V,200KVA,three-phase five-wire system,50Hz
Heating power kw 165 165
Heating consumption for single furnace kW/hr ‚2900(430kg) ‚4000(680kg)
Silicon ingot consumption unit kW/hr ‚6.8‚6
Vacuum and other energy consumption kWh 350400
Max temperature 16001600
Max working temperature 1560 1560
Vacuum system Mechanical pump +Roots pump Mechanical pump +Roots pump
Ultimate vacuum inside the furnace mbar 0.02 0.02
Leakage rate of system mbar¨Mhr 0.01 0.01
Evacuating time min38 38
Cooling water Flow:140LPM
pressure:0.35-0.5MPa
differential pressure:0.25MPa
inlet temperature:21-30 Flow:140LPM
pressure:0.35-0.5MPa
differential pressure: 0.25MPa
inlet temperature:21-31
Compressed air Mpa0.5-0.60.5-0.6
Process gas Flow:0-50LPM
purity of air source:50ppm
gas consumption of single furnace 70m3
pressure .4-0.6MPa Flow: 0-50LPM
purity of air source 50ppm
gas consumption of single furnace:100m3
pressure:0.4-0.7MPa
Ambient temperature 540 40
Ambient humidity 65%65%
Ground requirements Ground levelness: 5mm, load-bearing 2.5T/m2Ground levelness: 5mmload-bearing 2.5T/m3.
